component
1N60G-AA3-R
Public Made by Adomby adom
UTC(Unisonic Tech) MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown1N60G-AA3-R
UTC(Unisonic Tech) · MOSFETs · SOT-223
1N60G-AA3-R from UTC(Unisonic Tech), in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet limits gate-source voltage VGSS to ±30 V. |
| 2 | D | passive | Drain terminal; the datasheet rates drain-source voltage VDSS at 600 V and continuous drain current ID at 1 A. |
| 3 | S | passive | Source terminal; the datasheet rates maximum continuous diode forward current IS at 1 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | SOT-223 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 600 | V | 3 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 3 | ||
| Continuous Drain Current | ID | 1 | A | 3 | |||
| Avalanche Energy Single Pulsed | EAS | 7.2 | mJ | Single Pulsed (Note 2) | 3 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | Note 3 | 3 | ||
| Power Dissipation SOT-223 | PD | 8 | W | TA=25°C | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Operating Temperature | TOPR | -55 | 150 | °C | 3 | ||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Junction to Ambient SOT-89/SOT-223 | θJA | 150 | °C/W | 3 | |||
| Junction to Case SOT-89/SOT-223 | θJC | 15.6 | °C/W | 3 | |||
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | VGS=0V, ID=250μA | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | μA | VDS=600V, VGS=0V | 4 | ||
| Forward Gate-Source Leakage Current | IGSS | 100 | nA | VGS=30V, VDS=0V | 4 | ||
| Reverse Gate-Source Leakage Current | IGSS | -100 | nA | VGS=-30V, VDS=0V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250μA | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 12 | 15 | Ω | VGS=10V, ID=0.5A | 4 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 1 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 2 | A | 4 |
CAD (KiCad official)
- Symbol:
1N60G-AA3-R - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files:
1n60g-aa3-r-etched.step/1n60g-aa3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);1n60g-aa3-r.step/1n60g-aa3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC(Unisonic Tech) datasheet (9 pp, sha256
a128c580802b879a, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).