AON6566-MS from MSKSEMI, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S	passive	Source of the N-channel MOSFET (pin 1 end, marked by the PIN1 arrow and dot); the datasheet shows pins 1 to 3 as source.
2	S	passive	Source of the N-channel MOSFET, shown as source in the package outline drawing.
3	S	passive	Source of the N-channel MOSFET, shown as source in the package outline drawing.
4	G	input	Gate of the N-channel MOSFET; gate-source voltage rating is ±20 V, with a threshold of 1.0 to 2.5 V and operation down to 4.5 V drive.
5	D	passive	Drain of the N-channel MOSFET, shown as drain in the package outline drawing; VDS rating is 40 V in the maximum ratings table (30 V in the features).
6	D	passive	Drain of the N-channel MOSFET, shown as drain in the package outline drawing.
7	D	passive	Drain of the N-channel MOSFET, shown as drain in the package outline drawing.
8	D	passive	Drain of the N-channel MOSFET, shown as drain in the package outline drawing.
9	EP	passive	Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter	Value
Manufacturer	MSKSEMI
Package	DFN5x6-8L
Category	Transistors/Thyristors
Pins	9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Breakdown Voltage	V(BR)DSS	30			V	VGS=0V ID=250μA	3
Zero Gate Voltage Drain Current	IDSS			0.1	μA	VDS=30V,VGS=0V	3
Zero Gate Voltage Drain Current (Tj = 125℃)	IDSS			100	μA	VDS=30V,VGS=0V	3
Gate-Body Leakage Current	IGSS	-100		100	nA	VGS=±20V,VDS=0V	3
Gate Threshold Voltage	VGS(TH)	1	1.7	2.5	V	VDS=VGS, ID=250μA	3
Drain-Source On-State Resistance	RDS(ON)		4.7	6	mΩ	VGS=10V, ID=20A	3
Drain-Source On-State Resistance	RDS(ON)		5.4	8	mΩ	VGS=4.5V, ID=16A	3
Forward on voltage	VSD		0.8	1.2	V	ISD=20A,VGS=0V	3
Drain-Source Voltage	VDS			40	V		2
Gate-Source Voltage	VGS	-20		20	V		2
Continuous Drain Current	ID			50	A	VGS @ 10V, TC=25℃	2
Continuous Drain Current	ID			45	A	VGS @ 10V, TC=70℃	2
Pulsed Drain Current	IDM			280	A		2
Single Pulse Avalanche Energy	EAS			56	mJ		2
Storage Temperature Range	TSTG	-55		175	℃		2
Operating Junction Temperature Range	TJ	-55		175	℃		2
Thermal Resistance Junction-Ambient	RθJA			30	℃/W		2
Input Capacitance	Ciss		1930		pF	VDS=15V,VGS=0V, f=1 MHz	3
Output Capacitance	Coss		310		pF		3
Reverse Transfer Capacitance	Crss		260		pF		3
Gate Resistance	Rg		0.85			f= 1 MHz	3
Total Gate Charge	Qg		38		nC	VDS=15V,ID=20A, VGS=10V	3
Gate-Source Charge	Qgs		5.1		nC		3
Gate-Drain Charge	Qgd		12		nC		3
Turn-on Delay Time	td(on)		8.5		nS	VDD=15V, ID=20A, RG=3, VGS=10V	3
Turn-on Rise Time	tr		9		nS	VDD=15V, ID=20A, RG=3, VGS=10V	3
Turn-Off Delay Time	td(off)		31		nS	VDD=15V, ID=20A, RG=3, VGS=10V	3
Turn-Off Fall Time	tf		9		nS	VDD=15V, ID=20A, RG=3, VGS=10V	3
Reverse Recovery Time	trr		16		nS	Tj=25℃, Isd=20A, VGS=0V, di/dt=500A/μs	3

CAD (KiCad official)

Symbol: AON6566-MS
Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
3D model: DFN5x6-8L (KiCad packages3D, STEP)
3D model files: aon6566-ms-etched.step / aon6566-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aon6566-ms.step / aon6566-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: MSKSEMI datasheet (7 pp, sha256 e6b5acad5b94f374, retrieved 2026-11-04, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

AON6566-MS

Verified AON6566-MS

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

README