component
CJPF04N65
Public Made by Adomby adom
Changjiang Electronics Tech (CJ) MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownCJPF04N65
Changjiang Electronics Tech (CJ) · MOSFETs · TO-220F
CJPF04N65 from Changjiang Electronics Tech (CJ), in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the MOSFET; gate-source voltage is rated at VGS = ±30 V. |
| 2 | DRAIN | passive | Drain terminal; drain-source voltage is rated at VDS = 650 V, with continuous drain current ID of 4.0 A. |
| 3 | SOURCE | passive | Source terminal, the reference for the gate-source voltage; the source-drain diode forward voltage VSD is specified at IS = 4.0 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | TO-220F |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 650 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 4 | A | 1 | |||
| Pulsed Drain Current | IDM | 16 | A | 1 | |||
| Single Pulsed Avalanche Energy (note 1) | EAS | 280 | mJ | Note 1: L=30mH, IL=4 A, VDD=100V, RG=25Ω, Starting TJ=25℃ | 1 | ||
| Power Dissipation | PD | 2 | W | 1 | |||
| Thermal Resistance from Junction to Ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Maximum lead temperature for soldering purposes | TL | 260 | ℃ | 1/8 inch from case for 5 seconds | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 650 | V | VGS = 0V, ID =250µA | 2 | ||
| Drain-source diode forward voltage (note 2) | VSD | 1.5 | V | VGS = 0V, IS =4.0A | 2 | ||
| Zero gate voltage drain current | IDSS | 25 | µA | VDS =600V, VGS =0V | 2 | ||
| Gate-body leakage current (note 2) | IGSS | -100 | 100 | nA | VDS =0V, VGS =±30V | 2 | |
| Gate-threshold voltage | VGS(th) | 2 | 3.5 | 4 | V | VDS =VGS, ID =250µA | 2 |
| Static drain-source on-resistance (note 2) | RDS(on) | 2.5 | 3 | Ω | VGS =10V, ID =2.0A | 2 | |
| Total gate charge | Qg | 5 | 10 | nC | VDS =480V, VGS =10V, ID =4.0A | 2 |
CAD (KiCad official)
- Symbol:
CJPF04N65 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjiang Electronics Tech (CJ) datasheet (4 pp, sha256
5bf04fbece22f3d3, retrieved 2026-11-12, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).