component
MP175GS-Z
Public Made by Adomby adom
Monolithic Power Systems AC-DC Controllers And Regulators, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMP175GS-Z
Monolithic Power Systems · AC-DC Controllers And Regulators · SOIC-8
MP175GS-Z from Monolithic Power Systems, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VCC | power_in | Control circuit power supply and feedback input for the fixed-output set-up; absolute maximum VCC to GND is -0.3V to 30V. |
| 2 | FB | input | Regulator feedback input; absolute maximum FB to GND is -0.3V to 6.5V, and the MOSFET turn-on threshold VFB is 2.31V to 2.53V. |
| 3 | GNDA | power_in | Analog ground, which is to be shorted to GNDP in the application. |
| 4 | GNDP | power_in | IC power ground. |
| 5 | DRAIN | passive | Internal power MOSFET drain and input of the high-voltage current source regulator; the MOSFET breakdown voltage V(BR)DSS is 700V minimum at TJ = 25°C. |
| 6 | DRAIN | passive | Internal power MOSFET drain and input of the high-voltage current source regulator; the MOSFET breakdown voltage V(BR)DSS is 700V minimum at TJ = 25°C. |
| 7 | DRAIN | passive | Internal power MOSFET drain and input of the high-voltage current source regulator; the MOSFET breakdown voltage V(BR)DSS is 700V minimum at TJ = 25°C. |
| 8 | DRAIN | passive | Internal power MOSFET drain and input of the high-voltage current source regulator; the MOSFET breakdown voltage V(BR)DSS is 700V minimum at TJ = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Monolithic Power Systems |
| Package | SOIC-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Internal current-source regulator supply current | Iregulator | 3 | 4.5 | 6 | mA | VCC = 4V, VDRAIN = 100V | 4 |
| DRAIN leakage current | ILeak | 40 | μA | VDRAIN = 400V | 4 | ||
| Breakdown voltage | V(BR)DSS | 700 | V | TJ = 25°C | 4 | ||
| On resistance | Ron | 4.5 | 6.5 | Ω | TJ = 25°C | 4 | |
| VCC level (increasing) where the internal regulator turns off | VHVoff | 8.4 | 9 | 9.6 | V | 4 | |
| VCC level (decreasing) where the internal regulator turns on | VHVon | 7.9 | 8.5 | 9.1 | V | 4 | |
| VCC under-voltage lockout threshold | VCCL | 7 | 7.9 | 8.7 | V | 4 | |
| VCC level (decreasing) where the protection phase ends | VCCpro | 3.5 | 4 | V | 4 | ||
| IC consumption | ICC | 920 | 1150 | μA | fs = 50kHz | 4 | |
| IC consumption | ICC | 900 | 1050 | μA | MOSFET on | 4 | |
| IC consumption | ICC | 220 | 310 | 400 | μA | MOSFET off | 4 |
| Internal IC consumption, under protection | ICCpro | 40 | 65 | μA | 4 | ||
| Regulating voltage | VCCref | 16.7 | 17.4 | 18.1 | V | FB open | 4 |
| Peak current limit | ILimit | 1.02 | 1.1 | 1.18 | A | TJ = 25°C | 4 |
| SCP threshold | ISCP | 135 | 155 | 175 | % ILimit | TJ = 25°C | 4 |
| Minimum off time | tminoff | 11.6 | 14 | 16.6 | μs | 4 | |
| Maximum on time | tmaxon | 29.5 | 34 | 39.5 | μs | 4 | |
| MOSFET turn-on threshold | VFB | 2.31 | 2.43 | 2.53 | V | 4 | |
| Open-loop detection | VOLD | 0.2 | 0.3 | 0.4 | V | 4 | |
| HV regulator on and off hysteresis | 200 | mV | 4 | ||||
| Leading-edge blanking | tLEB1 | 310 | ns | 4 | |||
| Leading-edge blanking for SCP | tLEB2 | 250 | ns | 4 | |||
| Over-temperature protection threshold | 150 | °C | 4 | ||||
| DRAIN to GND voltage | -0.3 | 700 | V | 3 | |||
| VCC to GND voltage | -0.3 | 30 | V | 3 | |||
| FB to GND voltage | -0.3 | 6.5 | V | 3 | |||
| Continuous power dissipation | 1.64 | W | SOIC-8, TA = +25°C | 3 | |||
| Junction temperature | 150 | °C | 3 | ||||
| Lead temperature | 260 | °C | 3 | ||||
| Storage temperature | -60 | 150 | °C | 3 | |||
| ESD capability, human body model | 2 | kV | human body mode | 3 | |||
| ESD capability, charged device model | 2 | kV | charged device model | 3 | |||
| Operating junction temperature | TJ | -40 | 125 | °C | 3 | ||
| Junction-to-ambient thermal resistance | θJA | 76 | °C/W | Measured on JESD51-7, 4-layer PCB | 3 | ||
| Junction-to-case thermal resistance | θJC | 35 | °C/W | Measured on JESD51-7, 4-layer PCB | 3 |
CAD (KiCad official)
- Symbol:
MP175GS-Z - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
mp175gs-z-etched.step/mp175gs-z-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mp175gs-z.step/mp175gs-z.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Monolithic Power Systems datasheet (19 pp, sha256
60a0a06dd32682dc, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).