component
TSD16N25M
Public Made by Adomby adom
Truesemi MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTSD16N25M
Truesemi · MOSFETs · TO-252
TSD16N25M from Truesemi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±30 V max and a threshold VGS(th) of 2.0 to 4.0 V at ID=250uA. |
| 2 | D | passive | Drain; connects to the 250 V (VDSS) drain terminal, rated 16 A DC at TC=25°C and 64 A pulsed. |
| 3 | S | passive | Source; connects to the MOSFET source and body diode anode, with continuous source current IS up to 16 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Truesemi |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 250 | V | 1 | |||
| Gate-source voltage | VGSS | -30 | 30 | V | 1 | ||
| Drain current (DC) | ID | 16 | A | TC=25℃ | 1 | ||
| Drain current (DC) | ID | 7.2 | A | TC=100℃ | 1 | ||
| Drain current (Pulsed) | IDM | 64 | A | 1 | |||
| Power dissipation | PD | 35 | W | 1 | |||
| Avalanche current (Single) | IAS | 16 | A | 1 | |||
| Single pulsed avalanche energy | EAS | 144 | mJ | 1 | |||
| Avalanche current (Repetitive) | IAR | 14 | A | 1 | |||
| Repetitive avalanche energy | EAR | 13.9 | mJ | 1 | |||
| Junction temperature | TJ | 150 | 1 | ||||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Thermal resistance junction-case | Rth(J-C) | 3.57 | ℃/W | 1 | |||
| Thermal resistance junction-ambient | Rth(J-A) | 62.5 | ℃/W | 1 | |||
| Drain-source breakdown voltage | BVDSS | 250 | V | ID=250uA, VGS=0V | 2 | ||
| Gate threshold voltage | VGS(th) | 2 | 4 | V | ID=250uA, VDS=VGS | 2 | |
| Drain-source cut-off current | IDSS | 1 | uA | VDS=250V, VGS=0V | 2 | ||
| Gate leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±30V | 2 | |
| Drain-source on-resistance | RDS(on) | 0.22 | 0.25 | Ω | VGS=10V, ID=8.0A | 2 | |
| Input capacitance | Ciss | 1200 | 1275 | pF | 2 | ||
| Output capacitance | Coss | 150 | 170 | pF | 2 | ||
| Reverse transfer capacitance | Crss | 49 | 64 | pF | VGS=0V, VDS=25V f=1 MHz | 2 | |
| Total gate charge | Qg | 22 | 28 | nC | 2 | ||
| Source current (DC) | IS | 16 | A | 2 | |||
| Source current (Pulsed) | ISM | 64 | A | 2 | |||
| Forward voltage | VSD | 1.4 | V | VGS=0V, IS=16A | 2 |
CAD (KiCad official)
- Symbol:
TSD16N25M - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
tsd16n25m-etched.step/tsd16n25m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tsd16n25m.step/tsd16n25m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Truesemi datasheet (6 pp, sha256
08b70e506f7103db, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).