component
FDD306P-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDD306P-HXY
HXY MOSFET · MOSFETs · TO-252-2L
FDD306P-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with gate-source voltage rated at ±12 V. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 20 V and continuous drain current of 60 A at TC=25℃. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, serving as the reference for the gate-source voltage rated at ±12 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current-Continuous | ID | 60 | A | TC=25℃ | 1 | ||
| Drain Current-Continuous | ID (100℃) | 42 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 210 | A | 1 | |||
| Maximum Power Dissipation | PD | 60 | W | 1 | |||
| Derating factor | 0.48 | W/℃ | 1 | ||||
| Single pulse avalanche energy | EAS | 200 | mJ | Note 5: Tj=25℃,VDD=10V,VG=10V,L=0.5mH,Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2.1 | ℃/W | Note 2 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.75 | 1 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 4.5 | 6 | mΩ | VGS=4.5V, ID=20 A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 5.3 | 8.2 | mΩ | VGS=2.5V, ID=15A | 2 | |
| Forward Transconductance | gFS | 15 | S | VDS=10V,ID=20A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=10A | 2 | ||
| Diode Forward Current | IS | 60 | A | 2 |
CAD (KiCad official)
- Symbol:
FDD306P-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
fdd306p-hxy-etched.step/fdd306p-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdd306p-hxy.step/fdd306p-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
4d369c7928b0baef, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).