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STTH4R02BY-TR
Public Made by Adomby adom
STMicroelectronics Fast Recovery / High Efficiency Diodes, DPAK. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownSTTH4R02BY-TR
STMicroelectronics · Fast Recovery / High Efficiency Diodes · DPAK
STTH4R02BY-TR from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | NC | unconnected | No connection; the left lead in the DPAK pictogram is labelled NC. |
| 2 | K | passive | Cathode, connected to the metal tab; the diode is rated for VRRM of 200 V and IF(AV) of 4 A. |
| 3 | A | passive | Anode, the right lead in the DPAK pictogram. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | DPAK |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | 200 | V | Tj = -40 °C to + 175 °C | 2 | ||
| Forward rms current | IF(RMS) | 10 | A | 2 | |||
| Average forward current | IF(AV) | 4 | A | δ = 0.5, square wave; DPAK Tc = 160 °C | 2 | ||
| Surge non repetitive forward current | IFSM | 70 | A | tp = 10 ms sinusoidal | 2 | ||
| Storage temperature range | Tstg | -65 | 175 | °C | 2 | ||
| Maximum operating junction temperature | Tj | -40 | 175 | °C | See note 1: (dPtot/dTj) < (1/Rth(j-a)) to avoid thermal runaway on own heatsink | 2 | |
| Junction to case thermal resistance | Rth(j-c) | 3.5 | °C/W | DPAK | 2 | ||
| Reverse leakage current | IR | 3 | µA | Tj = 25 °C, VR = VRRM | 2 | ||
| Reverse leakage current | IR | 2 | 20 | µA | Tj = 125 °C, VR = VRRM | 2 | |
| Forward voltage drop | VF | 0.95 | 1.05 | V | Tj = 25 °C, IF = 4 A; pulse test tp = 380 µs, δ < 2% | 2 | |
| Forward voltage drop | VF | 0.76 | 0.83 | V | Tj = 150 °C, IF = 4 A; pulse test tp = 380 µs, δ < 2% | 2 | |
| Reverse recovery time | trr | 24 | 30 | ns | Tj = 25 °C, IF = 1 A; dIF/dt = -50 A/µs; VR = 30 V | 3 | |
| Reverse recovery time | trr | 16 | 20 | ns | Tj = 25 °C, IF = 1 A; dIF/dt = -100 A/µs; VR = 30 V | 3 | |
| Reverse recovery current | IRM | 4.4 | 5.5 | A | Tj = 125 °C, IF = 4 A; dIF/dt = -200 A/µs; VR = 160 V | 3 | |
| Reverse recovery time | trr | 27 | ns | 3 | |||
| Reverse recovery charges | Qrr | 60 | nC | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | Abs | Updated features and description in cover page. Updated Table 2: "Absolute ratings (limiting values at 25 °C, unless | 13 | |
| contacts | copper | versus copper surface under each lead | 5 |
CAD (KiCad official)
- Symbol:
STTH4R02BY-TR - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files:
stth4r02by-tr-etched.step/stth4r02by-tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stth4r02by-tr.step/stth4r02by-tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (14 pp, sha256
04e9944b94ef5376, retrieved 2026-10-21, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).