component
MOT65R280D
Public Made by Adomby adom
MOT MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMOT65R280D
MOT · MOSFETs · TO-252
MOT65R280D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel super junction MOSFET, with gate-source voltage rated at ±30 V (VGSS). |
| 2 | Drain | passive | Drain terminal of the MOSFET, rated for a drain-source voltage of 650 V (VDSS) and continuous drain current of 15 A (ID). |
| 3 | Source | passive | Source terminal of the MOSFET; the body diode is rated for continuous current of 15 A (IS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | VGS = 0V | 1 | ||
| Continuous Drain Current | ID | 15 | A | 1 | |||
| Pulsed Drain Current | IDM | 45 | A | 1 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 290 | mJ | 1 | |||
| Avalanche Current | IAS | 2.4 | A | 1 | |||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS = 0...480V | 1 | ||
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS = 0…480V, ISD ≤ ID | 1 | ||
| Power Dissipation | PD | 104 | W | TC = 25ºC | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 650 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current (TJ = 25ºC) | IDSS | 1 | µA | VDS= 650V, VGS = 0V, TJ = 25ºC | 2 | ||
| Zero Gate Voltage Drain Current (TJ = 150ºC) | IDSS | 100 | µA | VDS= 650V, VGS= 0V, TJ= 150ºC | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±30V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 2.5 | 4 | V | VDS = VGS, ID = 250µA | 2 | |
| Drain-Source On-Resistance | RDS(on) | 0.23 | 0.28 | Ω | VGS = 10V, ID = 7.5A | 2 | |
| Continuous Body Diode Current | IS | 15 | A | TC = 25ºC | 2 | ||
| Pulsed Diode Forward Current | ISM | 45 | A | 2 | |||
| Body Diode Voltage | VSD | 0.9 | 1.2 | V | TJ = 25ºC, ISD = 15A, VGS = 0V | 2 | |
| Thermal Resistance, Junction-to-Case | RθJC | 1.2 | °C/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
MOT65R280D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mot65r280d-etched.step/mot65r280d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mot65r280d.step/mot65r280d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MOT datasheet (7 pp, sha256
9c1aad1aa1dbc6a1, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).