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Contents

README

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ISP20EP10LMXTSA1

Infineon Technologies · MOSFETs · SOT-223-4

ISP20EP10LMXTSA1 from Infineon Technologies, in a SOT-223-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the P-channel enhancement-mode MOSFET, with a threshold of -1.0 V min to -2.0 V max and an absolute maximum VGS of ±20 V.
2 Drain passive Drain of the P-channel MOSFET, rated for VDS of -100 V and continuous drain current of -0.99 A at TC=25 °C, and connected to tab pin 4.
3 Source passive Source of the P-channel MOSFET, which carries the body-diode forward current of up to -0.99 A continuous at TC=25 °C.
4 Drain passive Drain tab of the PG-SOT223-4 package, shown as Drain Pin 2, 4 and common with pin 2, rated for VDS of -100 V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-223-4
Category Triode/MOS Tube/Transistor
Pins 4

CAD (KiCad official)

  • Symbol: ISP20EP10LMXTSA1
  • Footprint: Package_TO_SOT_SMD:SOT-223
  • 3D model: SOT-223-4 (KiCad packages3D, STEP)
  • 3D model files: isp20ep10lmxtsa1-etched.step / isp20ep10lmxtsa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); isp20ep10lmxtsa1.step / isp20ep10lmxtsa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 107ca4715f9ae089, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF