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Contents

README

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FM24V01A-GTR

Infineon Cypress Semicon · FRAM · SOIC-8

FM24V01A-GTR from Infineon Cypress Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 WP input Write protect input; write-protects entire memory array when tied to VDD, enables all writes when connected to ground; internally pulled down.
2 SCL input Serial clock input for I2C two-wire interface; Schmitt trigger for noise immunity; data clocked out on falling edge and latched on rising edge.
3 SDA bidirectional Serial data address line for I2C two-wire interface; open-drain output with slope-controlled falling edges and Schmitt trigger input; external pull-up resistor required.
4 VSS power_in Ground supply connection; must be connected to system ground.
5 VDD power_in Power supply input; operating range 2.0 V to 3.6 V for industrial temperature -40°C to +85°C.
6 A2 input Device select address input 2; internally pulled down; must match corresponding slave address bits for device selection among up to eight devices on same I2C bus.
7 A1 input Device select address input 1; internally pulled down; must match corresponding slave address bits for device selection among up to eight devices on same I2C bus.
8 A0 input Device select address input 0; internally pulled down; must match corresponding slave address bits for device selection among up to eight devices on same I2C bus.

Key specifications

Parameter Value
Manufacturer Infineon Cypress Semicon
Package SOIC-8
Category Memory
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Power supply voltage VDD 2 3.3 3.6 V 13
Operating ambient temperature (industrial range) TA -40 85 °C Industrial range 13
Average VDD current IDD 175 µA fSCL = 100 kHz 13
Average VDD current IDD 400 µA fSCL = 1 MHz 13
Average VDD current IDD 1000 µA fSCL = 3.4 MHz 13
VDD standby current ISB 90 150 µA SCL = SDA = VDD; other inputs VSS or VDD; Stop command issued 13
Sleep mode current IZZ 5 8 µA SCL = SDA = VDD; other inputs VSS or VDD; Stop command issued 13
Input leakage current (except WP and A2-A0) ILI -1 1 µA VSS < VIN < VDD 13
Input leakage current (for WP and A2-A0) ILI -1 100 µA VSS < VIN < VDD 13
Output leakage current ILO -1 1 µA VSS < VOUT < VDD 13
Input LOW voltage VIL -0.3 V max 0.3 × VDD 13
Output LOW voltage VOL 0.4 V IOL = 3 mA 13
Output LOW voltage VOL 0.6 V IOL = 6 mA 13
Input resistance (WP, A2-A0) Rin 50 kΩ For VIN = VIL(Max) 13
Input resistance (WP, A2-A0) Rin 1 MΩ For VIN = VIH(Min) 14
Data retention TDR 10 Years TA = 85 °C 14
Data retention TDR 38 Years TA = 75 °C 14
Data retention TDR 151 Years TA = 65 °C 14
Endurance NVC 1014 Cycles Over operating temperature 14
Input/output pin capacitance (SDA) CIO 8 pF TA = 25 °C, f = 1 MHz, VDD = VDD(typ) 14
Input pin capacitance CI 6 pF 14
Storage temperature -65 125 °C 13
Ambient temperature with power applied -55 125 °C 13
Maximum accumulated storage time at 125 °C ambient 1000 h At 125 °C ambient temperature 13
Maximum accumulated storage time at 85 °C ambient 10 years At 85 °C ambient temperature 13
Supply voltage on VDD relative to VSS VDD -1 4.5 V 13
Input voltage VIN -1 4.5 V VIN < VDD + 1.0 V (not for SCL and SDA) 13
DC voltage applied to outputs in HI-Z state -0.5 V Max: VDD + 0.5 V 13
Transient voltage on any pin to ground potential -2 V Transient < 20 ns; max VDD + 2.0 V 13
Package power dissipation capability 1 W TA = 25 °C 13
Surface mount lead soldering temperature 260 °C 3 seconds 13
Power-up VDD(min) to first access (START condition) tPU 250 µs 16
Last access (STOP condition) to power-down (VDD(min)) tPD 0 µs 16
VDD power-up ramp rate tVR 50 µs/V 16
VDD power-down ramp rate tVF 100 µs/V 16
Recovery time from sleep mode tREC 400 µs 16
SCL clock frequency fSCL 1 MHz Fast-mode Plus (Fm+) 15
SCL clock frequency fSCL 3.4 MHz Hs-mode 15
Start condition setup for repeated Start tSU;STA 260 ns Fast-mode Plus (Fm+) 15
Start condition setup for repeated Start tSU;STA 160 ns Hs-mode 15
Start condition hold time tHD;STA 260 ns Fast-mode Plus (Fm+) 15
Start condition hold time tHD;STA 160 ns Hs-mode 15
Clock LOW period tLOW 500 ns Fast-mode Plus (Fm+) 15
Clock LOW period tLOW 160 ns Hs-mode 15
Clock HIGH period tHIGH 260 ns Fast-mode Plus (Fm+) 15
Clock HIGH period tHIGH 60 ns Hs-mode 15
Data in setup tSU;DAT 50 ns Fast-mode Plus (Fm+) 15
Data in setup tSU;DAT 10 ns Hs-mode 15
SCL LOW to SDA data out valid tAA 450 ns Fast-mode Plus (Fm+) 15
SCL LOW to SDA data out valid tAA 130 ns Hs-mode 15
ACK output valid time tVD;ACK 450 ns Fast-mode Plus (Fm+) 15
ACK output valid time tVD;ACK 130 ns Hs-mode 15
Bus free before new transmission tBUF 500 ns Fast-mode Plus (Fm+) 15
Bus free before new transmission tBUF 300 ns Hs-mode 15
Input rise time tR 120 ns Fast-mode Plus (Fm+) 15
Input rise time tR 10 80 ns Hs-mode 15
Output fall time from VIH min to VIL max tOF 120 ns Fast-mode Plus (Fm+) 15
Output fall time from VIH min to VIL max tOF 80 ns Hs-mode 15
Thermal resistance, junction to ambient θJA 146 °C/W 8-pin SOIC; EIA/JESD51 14
Thermal resistance, junction to case θJC 48 °C/W 8-pin SOIC 14

CAD (KiCad official)

  • Symbol: FM24V01A-GTR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: fm24v01a-gtr-etched.step / fm24v01a-gtr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fm24v01a-gtr.step / fm24v01a-gtr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Cypress Semicon datasheet (22 pp, sha256 628863541ffe35eb, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF