component
NTD4809N-1G-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNTD4809N-1G-VB
VBsemi Elec · MOSFETs · TO-251
NTD4809N-1G-VB from VBsemi Elec, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with VGS rated at ±20 V maximum and a gate threshold voltage of 1.2 V min to 3.0 V max at ID = 250 µA. |
| 2 | D | passive | Drain terminal, with a drain-source voltage rating of 30 V and a continuous drain current of 50 A at TC = 25 °C. |
| 3 | S | passive | Source terminal, with a continuous source-drain body diode current of 15 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-251 |
| Category | Transistors/Thyristors |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
NTD4809N-1G-VB - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files:
ntd4809n-1g-vb-etched.step/ntd4809n-1g-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntd4809n-1g-vb.step/ntd4809n-1g-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
e26d3fec33977b38, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).