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Si7850DP-MS

Public Made by Adom

by adom

MSKSEMI MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorssi7850dp-msfactory-2.0.0extractor-text

Verified Si7850DP-MS

by Ray · last 4 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

4 Nov 2026RayPublished by the parts factory: tier lcsc, 9 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: Si7850DP-MS · DFN5x6-8L · 9 pins
  • ✓copper: 16 copper pads, none touching another net
  • ✓datasheet: all 9 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: DFN-S-8-1EP_6x5mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-h6y4pdd_/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 9 pins = 9 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 9 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ si7850dp-ms.kicad_sym✓ si7850dp-ms.kicad_mod✓ si7850dp-ms.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

Si7850DP-MS

MSKSEMI · MOSFETs · DFN5x6-8L

Si7850DP-MS from MSKSEMI, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, carrying up to 30 A continuous (ID at TC=25°C) and sitting at the low side of the 60 V VDS rating.
2 S passive Source terminal of the N-channel MOSFET, carrying up to 30 A continuous (ID at TC=25°C) and sitting at the low side of the 60 V VDS rating.
3 S passive Source terminal of the N-channel MOSFET, carrying up to 30 A continuous (ID at TC=25°C) and sitting at the low side of the 60 V VDS rating.
4 G input Gate terminal of the N-channel MOSFET, rated for ±20 V gate-source voltage with a threshold of 1.2 to 2.5 V and RDS(ON) specified at VGS=10 V and 4.5 V.
5 D passive Drain terminal of the N-channel MOSFET, rated for 60 V drain-source voltage and 30 A continuous current at TC=25°C.
6 D passive Drain terminal of the N-channel MOSFET, rated for 60 V drain-source voltage and 30 A continuous current at TC=25°C.
7 D passive Drain terminal of the N-channel MOSFET, rated for 60 V drain-source voltage and 30 A continuous current at TC=25°C.
8 D passive Drain terminal of the N-channel MOSFET, rated for 60 V drain-source voltage and 30 A continuous current at TC=25°C.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package DFN5x6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID@TC=25℃ 30 A TC=25℃, VGS @ 10V 2
Continuous Drain Current ID@TC=100℃ 15 A TC=100℃, VGS @ 10V 2
Pulsed Drain Current IDM 46 A 2
Single Pulse Avalanche Energy EAS 25.5 mJ 2
Avalanche Current IAS 22.6 A 2
Total Power Dissipation PD@TC=25℃ 34.7 W TC=25℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Thermal Resistance Junction-ambient RθJA 62 ℃/W 2
Thermal Resistance Junction-Case RθJC 3.6 ℃/W 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 3
Static Drain-Source On-Resistance RDS(ON) 20 25 mΩ VGS=10V, ID=15A 3
Static Drain-Source On-Resistance RDS(ON) 24 20 mΩ VGS=4.5V, ID=10A 3
Gate Threshold Voltage VGS(th) 1.2 2.5 V VGS=VDS, ID=250uA 3
Drain-Source Leakage Current IDSS 1 uA VDS=48V, VGS=0V, TJ=25℃ 3
Drain-Source Leakage Current IDSS 5 uA VDS=48V, VGS=0V, TJ=55℃ 3
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 3
Continuous Source Current IS 30 A VG=VD=0V, Force Current 3
Pulsed Source Current ISM 46 A 3
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 3

CAD (KiCad official)

  • Symbol: Si7850DP-MS
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8L (KiCad packages3D, STEP)
  • 3D model files: si7850dp-ms-etched.step / si7850dp-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si7850dp-ms.step / si7850dp-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (7 pp, sha256 857cabef938d5b59, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF