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Contents

README

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RS1208B-SW

Shenzhen Haoruijia Elec · Thyristors (SCR)/Modules · TO-220AB-3

RS1208B-SW from Shenzhen Haoruijia Elec, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal T1 of the triac; the part is rated for 12 A IT(RMS) at Tc=105℃ and VDRM/VRRM of 600/800 V.
2 T2 passive Main terminal T2 of the triac, which is also connected to the non-insulated mounting tab; the part is rated for 12 A IT(RMS) at Tc=105℃.
3 Gate input Gate trigger input; IGT max is 5 mA for the SW grade (VD=12V, RL=30Ω, quadrants I-II-III), VGT is 1.3 V and VGM is 5 V at Tj=125℃.

Key specifications

Parameter Value
Manufacturer Shenzhen Haoruijia Elec
Package TO-220AB-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak off-state voltage VDRM 600 V 1
Repetitive peak reverse voltage VRRM 800 V 1
RMS on-state current IT(RMS) 12 A Tc=105℃ 1
Surge on-state current ITSM 126 A sine wave 60Hz t=16.7ms 1
I2t value I2t 78 A2s tp=10ms 1
Critical rate of rise of on-state current dI/dt 50 A/μs IG=2IGT tr≤100ns F=120Hz 1
Peak gate current IGM 4 A Tj=125℃ tp=20µs 1
Peak gate voltage VGM 5 V Tj=125℃ 1
Peak gate power PGM 5 W Tj=125℃ 1
Average gate power PG(AV) 1 W Tj=125℃ 1
Junction temperature Tj 125 ℃ 1
Storage temperature Tstg -40 150 ℃ 1
Repetitive peak off-state / reverse current IDRM/IRRM 5 µA VDRM=VRRM Tj=25℃ 1
Repetitive peak off-state / reverse current IDRM/IRRM 1 mA VDRM=VRRM Tj=125℃ 1
On-state voltage VTM 1.55 V IT=17A tp=380µs 1
Holding current (SW column) IH 15 mA IGT=100mA 1
Latching current (SW column) IL 25 mA IG=1.2IGT Quadrants Ⅰ-Ⅱ-Ⅲ 1
Gate trigger current (SW column) IGT 5 mA VD=12V RL=30Ω Quadrants Ⅰ-Ⅱ-Ⅲ 1
Gate non-trigger voltage VGD 0.2 V VD=VDRM RL=3.3KΩ Tj=125℃ 1
Critical rate of rise of off-state voltage (SW column) dV/dt 40 V/µs VDM=67%VDRM Gate open Tj=125℃ 1
Critical rate of rise of commutating voltage (dV/dt)C 10 V/µs VDM=400V Tj=125℃ (dI/dt)C=1.8A/ms Gate open 1

CAD (KiCad official)

  • Symbol: RS1208B-SW
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB-3 (KiCad packages3D, STEP)
  • 3D model files: rs1208b-sw-etched.step / rs1208b-sw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs1208b-sw.step / rs1208b-sw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shenzhen Haoruijia Elec datasheet (3 pp, sha256 e6edb8febd3fd5bc, retrieved 2026-10-14, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF