component
ER3GA_R1_00001
Public Made by Adomby adom
PANJIT International Fast Recovery / High Efficiency Diodes, DO-214AA(SMB). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownER3GA_R1_00001
PANJIT International · Fast Recovery / High Efficiency Diodes · DO-214AA(SMB)
ER3GA_R1_00001 from PANJIT International, in a DO-214AA(SMB). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal, identified by the color band on the package; for the ER3GA the repetitive peak reverse voltage is 400 V and the average forward current is 3 A. |
| 2 | Anode | passive | Anode terminal; the device is rated for a peak forward surge current of 80 A (8.3 ms single half sine-wave) and an operating and storage temperature range of -55 to +150 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PANJIT International |
| Package | DO-214AA(SMB) |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Recurrent Peak Reverse Voltage | VRRM | 400 | V | 1 | |||
| Maximum RMS Voltage | VRMS | 280 | V | 1 | |||
| Maximum DC Blocking Voltage | VDC | 400 | V | 1 | |||
| Maximum Average Forward Current | IF(AV) | 3 | A | 1 | |||
| Peak Forward Surge Current | IFSM | 80 | A | 8.3ms single half sine-wave superimposed on rated load | 1 | ||
| Maximum Forward Voltage | VF | 1.25 | V | at 3A | 1 | ||
| Maximum DC Reverse Current at Rated DC Blocking Voltage | IR | 1 | μA | at rated DC blocking voltage | 1 | ||
| Maximum Reverse Recovery Time | trr | 35 | ns | Note 3: IF=0.5A, IR=-1A, Irr=-0.25A | 1 | ||
| Typical Junction Capacitance | CJ | 45 | pF | Measured at 1MHz and applied VR=4V | 1 | ||
| Typical Thermal Resistance, junction to ambient | RθJA | 135 | °C/W | Notes 2 | 1 | ||
| Typical Thermal Resistance, junction to case | RθJC | 20 | °C/W | Notes 1 | 1 | ||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
ER3GA_R1_00001 - Footprint:
Diode_SMD:D_SMB - 3D model: DO-214AA(SMB) (KiCad packages3D, STEP)
- 3D model files:
er3ga-r1-00001-etched.step/er3ga-r1-00001-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);er3ga-r1-00001.step/er3ga-r1-00001.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PANJIT International datasheet (6 pp, sha256
6a8d40ae43b6cd96, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).