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Contents

README

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BRCS200N04DSC

Foshan Blue Rocket Elec · MOSFETs · SOP-8

BRCS200N04DSC from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of MOSFET 2 (dual N-channel, 40V VDSS).
2 G2 input Gate of MOSFET 2, with VGS rated ±20V and threshold of 1.0 to 2.5V at 250µA.
3 S1 passive Source of MOSFET 1 (dual N-channel, 40V VDSS).
4 G1 input Gate of MOSFET 1, with VGS rated ±20V and threshold of 1.0 to 2.5V at 250µA.
5 D1 passive Drain of MOSFET 1, tied with pin 6, with VDSS of 40V.
6 D1 passive Drain of MOSFET 1, tied with pin 5, with VDSS of 40V.
7 D2 passive Drain of MOSFET 2, tied with pin 8, with VDSS of 40V.
8 D2 passive Drain of MOSFET 2, tied with pin 7, with VDSS of 40V.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 40 V 2
Gate-Source Voltage VGS -20 20 V 2
Drain Current ID 8 A 2
Pulsed Drain Current IDM 6 A 2
Power Dissipation PD 2 W TA=25℃ 2
Avalanche Current IAS 11.7 A 2
Avalanche energy EAS 54.8 mJ L=0.5mH 2
Operating and Junction Temperature Range Tj, Tstg -55 150 ℃ 2
Junction-to-Ambient RθJA 62.5 ℃/W t≤10s 2
Junction-to-Ambient RθJA 90 ℃/W Steady-State 2
Junction-to-Lead RθJC 40 ℃/W Steady-State 2
Drain-Source Breakdown Voltage BVDSS 40 45 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V VGS=0V 2
Gate-Body Leakage Current Forward IGSS 100 nA VGS=20V VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.7 2.5 V VDS=VGS ID=250μA 2
Static Drain-Source On-Resistance RDS(on) 19.9 22 mΩ VGS=10V ID=4A 2
Static Drain-Source On-Resistance RDS(on) 29.5 36 mΩ VGS=4.5V ID=3A 2
Diode Forward Voltage VSD 0.75 1 V IS=1A VGS=0V 2
Input Capacitance Ciss 880 pF VDS=10V VGS=0V f=1.0MHz 3
Output Capacitance Coss 790 pF VDS=10V VGS=0V f=1.0MHz 3
Reverse Transfer Capacitance Crss 260 pF VDS=10V VGS=0V f=1.0MHz 3
Turn-On Delay Time td(on) 4 ns VGS=10V VDS=20V RGEN=3Ω RL=2.5Ω 3
Turn-On Rise Time tr 3 ns VGS=10V VDS=20V RGEN=3Ω RL=2.5Ω 3
Turn-Off Delay Time td(off) 15 ns VGS=10V VDS=20V RGEN=3Ω RL=2.5Ω 3
Turn-Off Fall Time tf 2 ns VGS=10V VDS=20V RGEN=3Ω RL=2.5Ω 3
Total Gate Charge Qg(10V) 6.5 nC VGS=10V VDS=20V ID=8A 3
Total Gate Charge Qg(4.5V) 3 nC VGS=10V VDS=20V ID=8A 3
Gate-Source Charge Qgs 1.2 nC VGS=10V VDS=20V ID=8A 3

CAD (KiCad official)

  • Symbol: BRCS200N04DSC
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: brcs200n04dsc-etched.step / brcs200n04dsc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); brcs200n04dsc.step / brcs200n04dsc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (8 pp, sha256 20dd8b5f8dc3185c, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF