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AO4268
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO4268
Alpha Omega Semicon · MOSFETs · SOIC-8
AO4268 from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied to pins 2 and 3; body diode continuous current is 4A max. |
| 2 | S | passive | Source of the N-channel MOSFET, tied to pins 1 and 3 and carrying the 19A continuous drain current at TA=25°C. |
| 3 | S | passive | Source of the N-channel MOSFET, tied to pins 1 and 2, with VGS rated at ±20V relative to the gate. |
| 4 | G | input | Gate of the N-channel MOSFET, with a ±20V maximum gate-source voltage and a threshold of 1.3V min to 2.3V max at 250µA. |
| 5 | D | passive | Drain of the N-channel MOSFET, tied to pins 6, 7 and 8, with a 60V maximum drain-source voltage. |
| 6 | D | passive | Drain of the N-channel MOSFET, tied to pins 5, 7 and 8, with a 76A maximum pulsed drain current. |
| 7 | D | passive | Drain of the N-channel MOSFET, tied to pins 5, 6 and 8, with RDS(ON) below 4.8mΩ at VGS=10V. |
| 8 | D | passive | Drain of the N-channel MOSFET, tied to pins 5, 6 and 7, with RDS(ON) below 6.5mΩ at VGS=4.5V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | ID=250µA, VGS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.3 | 1.8 | 2.3 | V | VDS=VGS, ID=250µA | 2 |
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=60V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (TJ=55°C) | IDSS | 5 | µA | VDS=60V, VGS=0V, TJ=55°C | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 4 | 4.8 | mΩ | VGS=10V, ID=19A | 2 | |
| Static Drain-Source On-Resistance (TJ=125°C) | RDS(ON) | 6.3 | 7.6 | mΩ | VGS=10V, ID=19A, TJ=125°C | 2 | |
| Static Drain-Source On-Resistance (4.5V) | RDS(ON) | 5.2 | 6.5 | mΩ | VGS=4.5V, ID=16A | 2 | |
| Forward Transconductance | gFS | 83 | S | VDS=5V, ID=19A | 2 | ||
| Diode Forward Voltage | VSD | 0.7 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 4 | A | 2 | |||
| Input Capacitance | Ciss | 2500 | pF | VGS=0V, VDS=30V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 670 | pF | VGS=0V, VDS=30V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 65 | pF | VGS=0V, VDS=30V, f=1MHz | 2 | ||
| Gate resistance | Rg | 0.5 | 1.2 | 2 | Ω | f=1MHz | 2 |
| Total Gate Charge (10V) | Qg (10V) | 44 | 65 | nC | VGS=10V, VDS=30V, ID=19A | 2 | |
| Total Gate Charge (4.5V) | Qg (4.5V) | 21 | 30 | nC | 2 | ||
| Gate Source Charge | Qgs | 6.5 | nC | 2 | |||
| Gate Drain Charge | Qgd | 8.5 | nC | 2 | |||
| Turn-On DelayTime | tD(on) | 7.5 | ns | VGS=10V, VDS=30V, RL=1.6Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 6.5 | ns | VGS=10V, VDS=30V, RL=1.6Ω, RGEN=3Ω | 2 | ||
| Turn-Off DelayTime | tD(off) | 38 | ns | VGS=10V, VDS=30V, RL=1.6Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 8 | ns | VGS=10V, VDS=30V, RL=1.6Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 22 | ns | IF=19A, di/dt=500A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 80 | nC | IF=19A, di/dt=500A/µs | 2 | ||
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| VDS Spike | VSPIKE | 72 | V | 10µs | 1 | ||
| Continuous Drain Current | ID | 19 | A | TA=25°C, t≤10s | 1 | ||
| Continuous Drain Current | ID | 14.5 | A | TA=25°C, Steady-State | 1 | ||
| Continuous Drain Current | ID | 16 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 76 | A | 1 | |||
| Avalanche Current | IAS | 30 | A | 1 | |||
| Avalanche energy | EAS | 135 | mJ | L=0.3mH | 1 | ||
| Power Dissipation | PD | 3.1 | W | TA=25°C, t≤10s | 1 | ||
| Power Dissipation | PD | 2 | W | TA=70°C, t≤10s | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 31 | 40 | °C/W | t≤10s | 1 | |
| Maximum Junction-to-Ambient | RθJA | 59 | 75 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Lead | RθJL | 16 | 24 | °C/W | Steady-State | 1 |
CAD (KiCad official)
- Symbol:
AO4268 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
ao4268-etched.step/ao4268-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4268.step/ao4268.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (5 pp, sha256
68a3f30b5196be45, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).