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Contents

README

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MCP73832T-5ACI

Microchip Tech · Battery Management ICs · SOT-23-5

MCP73832T-5ACI from Microchip Tech, in a SOT-23-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 STAT output Charge status output for an LED or a host microcontroller with pull-up resistor; open-drain output on the MCP73832.
2 VSS power_in Battery management 0V reference, connected to the negative terminal of the battery and input supply.
3 VBAT power_out Battery charge control output connected to the positive battery terminal (drain of internal P-channel pass MOSFET), bypassed to VSS with a minimum of 4.7 µF.
4 VDD power_in Battery management input supply, recommended [VREG (typical) + 0.3V] to 6V, bypassed to VSS with a minimum of 4.7 µF.
5 PROG input Current regulation set pin: a resistor to VSS scales preconditioning, fast charge and termination currents, and floating the pin disables the charge controller.

Key specifications

Parameter Value
Manufacturer Microchip Tech
Package SOT-23-5
Category Power Supply Chip
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage VDD 3.75 6 V 3
Regulated Output Voltage VREG 4.466 4.5 4.534 V MCP7383X-5; VDD = [VREG(typical)+1V], IOUT = 10 mA, TA = -5°C to +55°C 3
Supply Current (Charging) ISS 510 1500 µA Charging 3
Supply Current (Charge Complete, No Battery) ISS 53 200 µA Charge Complete, No Battery 3
Supply Current (PROG Floating) ISS 25 50 µA PROG Floating 3
Supply Current (VDD < VBAT - 50 mV) ISS 1 5 µA VDD < (VBAT - 50 mV) 3
Supply Current (VDD < VSTOP) ISS 0.1 2 µA VDD < VSTOP 3
UVLO Start Threshold VSTART 3.3 3.45 3.6 V VDD Low-to-High 3
UVLO Stop Threshold VSTOP 3.2 3.38 3.5 V VDD High-to-Low 3
Line Regulation /(ΔVBAT/VBAT)/ΔVDD/ 0.09 0.3 %/V VDD = [VREG(typical)+1V] to 6V, IOUT = 10 mA 3
Load Regulation /ΔVBAT/VBAT/ 0.05 0.3 % IOUT = 10 mA to 50 mA, VDD = [VREG(typical)+1V] 3
Fast Charge Current Regulation IREG 90 100 110 mA PROG = 10 kΩ 3
Fast Charge Current Regulation IREG 450 505 550 mA PROG = 2.0 kΩ, Note 1 3
Fast Charge Current Regulation IREG 12.5 14.5 16.5 mA PROG = 67 kΩ, TA = -5°C to +55°C 3
Precondition Current Ratio IPREG / IREG 7.5 10 12.5 % PROG = 2.0 kΩ to 10 kΩ 4
Precondition Voltage Threshold Ratio VPTH / VREG 64 66.5 69 % VBAT Low-to-High 4
Charge Termination Current Ratio ITERM / IREG 5.6 7.5 9.4 % PROG = 2.0 kΩ to 10 kΩ 4
Recharge Voltage Threshold Ratio VRTH / VREG 94 96.5 99 % VBAT High-to-Low 4
Battery Detection Current IBAT_DET 0.6 6 µA VBAT Source Current 4
No-Battery-Present Impedance ZNO_BAT 7 MΩ VBAT Impedance ≥ ZNO_BAT for No Battery condition, Note 1 4
Output Reverse Leakage Current IDISCHARGE 0.15 2 µA PROG Floating 4
Output Reverse Leakage Current IDISCHARGE 0.25 2 µA VDD Floating 4
Output Reverse Leakage Current IDISCHARGE -5.5 -15 µA Charge Complete 4
Status Sink Current ISINK 25 mA 4
Status Low Output Voltage VOL 0.4 1 V ISINK = 4 mA 4
Status Input Leakage Current ILK 0.03 1 µA High-Impedance 4
Charge Impedance Range RPROG 2 67 kΩ 4
Minimum Shutdown Impedance RPROG 70 200 kΩ 4
UVLO Start Delay tSTART 5 ms VDD Low-to-High 5
Transition Time Out of Preconditioning tDELAY 1 ms VBAT < VPTH to VBAT > VPTH 5
Current Rise Time Out of Preconditioning tRISE 1 ms IOUT Rising to 90% of IREG 5
Termination Comparator Filter tTERM 0.4 1.3 3.2 ms Average IOUT Falling 5
Charge Comparator Filter tCHARGE 0.4 1.3 3.2 ms Average VBAT 5
Status Output Turn-Off tOFF 200 µs ISINK = 1 mA to 0 mA 5
Status Output Turn-On tON 200 µs ISINK = 0 mA to 1 mA 5
Specified Temperature Range TA -40 85 °C 5
Operating Temperature Range TJ -40 125 °C 5
Storage Temperature Range TA -65 150 °C 5
Supply Voltage VDD 7 V 3
All Inputs and Outputs w.r.t. VSS -0.3 V -0.3 to (VDD+0.3)V 3
Storage temperature -65 150 °C 3
ESD Human Body Model 4 kV 1.5 kΩ in Series with 100 pF 3
Pass Transistor ON-Resistance RDSON 350 mΩ VDD = 3.75V, TJ = 105°C 4
Thermal Shutdown Die Temperature TSD 150 °C 5
Die Temperature Hysteresis TSDHYS 10 °C 5
Thermal Resistance, 5-Lead SOT-23 θJA 230 °C/W 4-Layer JC51-7 Standard Board, Natural Convection 5

CAD (KiCad official)

  • Symbol: MCP73832T-5ACI
  • Footprint: Package_TO_SOT_SMD:SOT-23-5
  • 3D model: SOT-23-5 (KiCad packages3D, STEP)
  • 3D model files: mcp73832t-5aci-etched.step / mcp73832t-5aci-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mcp73832t-5aci.step / mcp73832t-5aci.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Microchip Tech datasheet (29 pp, sha256 75297f2a52355993, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF