component
2SD1664-R
Public Made by Adomby adom
TWGMC Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdown2SD1664-R
TWGMC · Bipolar (BJT) · SOT-89
2SD1664-R from TWGMC, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the NPN transistor; the datasheet gives no pin-specific limit, and the emitter-base breakdown voltage V(BR)EBO is 5 V minimum. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; the absolute maximum emitter-base voltage VEBO is 5 V and the maximum DC collector current is 1 A. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; the absolute maximum collector-base voltage VCBO is 40 V and the collector-emitter voltage VCEO is 32 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TWGMC |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain (Group R) | hFE | 180 | 390 | - | VCE = 3 V, IC = 100 mA | 1 | |
| Collector Base Breakdown Voltage | V(BR)CBO | 40 | V | IC = 50 µA | 1 | ||
| Collector Emitter Breakdown Voltage | V(BR)CEO | 32 | V | IC = 1 mA | 1 | ||
| Emitter Base Breakdown Voltage | V(BR)EBO | 5 | V | IE = 50 µA | 1 | ||
| Collector Cutoff Current | ICBO | 0.5 | µA | VCB = 20 V | 1 | ||
| Emitter Cutoff Current | IEBO | 0.5 | µA | VEB = 4 V | 1 | ||
| Collector Emitter Saturation Voltage | VCE(sat) | 0.4 | V | IC = 500 mA, IB = 50 mA | 1 | ||
| Collector Base Voltage | VCBO | 40 | V | 1 | |||
| Collector Emitter Voltage | VCEO | 32 | V | 1 | |||
| Emitter Base Voltage | VEBO | 5 | V | 1 | |||
| Collector Current - DC | IC | 1 | A | 1 | |||
| Collector Current - Pulse | ICP | 2 | A | Single pulse, PW = 100 ms | 1 | ||
| Total Power Dissipation (lower value) | Ptot | 0.5 | W | 1 | |||
| Total Power Dissipation (higher value) | Ptot | 2 | W | Mounted on a 40 X 40 X 0.7 mm ceramic board | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TStg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
2SD1664-R - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sd1664-r-etched.step/2sd1664-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd1664-r.step/2sd1664-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TWGMC datasheet (3 pp, sha256
a37095f916d8b50c, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).