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Contents

README

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IRF9630PBF

Vishay Intertech · MOSFETs · TO-220AB

IRF9630PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; gate-source voltage is rated at ±20 V (VGS).
2 D passive Drain of the P-channel MOSFET; rated at -200 V drain-source voltage (VDS) and -6.5 A continuous drain current at TC = 25 °C.
3 S passive Source of the P-channel MOSFET, connected to the integral reverse body diode, with continuous source-drain diode current rated at -6.5 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (absolute maximum) VDS -200 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -6.5 A TC = 25 °C 1
Continuous Drain Current ID -4 A TC = 100 °C 1
Pulsed Drain Current IDM -26 A 1
Single Pulse Avalanche Energy EAS 500 mJ 1
Repetitive Avalanche Current IAR -6.4 A 1
Repetitive Avalanche Energy EAR 7.4 mJ 1
Maximum Power Dissipation PD 74 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt -5 V/ns 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s 1
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Case-to-Sink, Flat, Greased Surface RthCS 0.5 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 1.7 °C/W 2
Drain-Source Breakdown Voltage VDS -200 V VGS = 0 V, ID = -250 μA 2
Gate-Source Threshold Voltage VGS(th) -2 -4 V VDS = VGS, ID = -250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS = -200 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 500 μA VDS = -160 V, VGS = 0 V, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.8 Ω VGS = -10 V, ID = -3.9 A 2
Forward Transconductance gfs 2.8 S VDS = -50 V, ID = -3.9 A 2
Total Gate Charge Qg 29 nC VGS = -10 V, ID = -6.5 A, VDS = -160 V 2
Gate-Source Charge Qgs 5.4 nC 2
Gate-Drain Charge Qgd 15 nC 2
Continuous Source-Drain Diode Current IS 6.5 A 2
Pulsed Diode Forward Current ISM 26 A 2
Body Diode Voltage VSD 6.5 V TJ = 25 °C, IS = -6.5 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 200 300 ns TJ = 25 °C, IF = -6.5 A, dI/dt = 100 A/μs 2
Body Diode Reverse Recovery Charge Qrr 1.9 2.9 μC 2

CAD (KiCad official)

  • Symbol: IRF9630PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irf9630pbf-etched.step / irf9630pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf9630pbf.step / irf9630pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 26a5f1cb8caea3c9, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF