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WGF4N70SE

Public Made by Adom

by adom

Wild Goose MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

WGF4N70SE

Wild Goose · MOSFETs · TO-220F

WGF4N70SE from Wild Goose, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate (G) input Gate terminal of the MOSFET; the datasheet rates gate-source voltage at ±30 V (absolute maximum).
2 Drain (D) passive Drain terminal of the MOSFET; rated 700 V drain-source voltage with 4.0 A drain current at Tj=25℃ (absolute maximum ratings).
3 Source (S) passive Source terminal of the MOSFET, the reference for gate-source voltage and the return path for drain current.

Key specifications

Parameter Value
Manufacturer Wild Goose
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 700 V 1
Drain Current ID 4 A Tj=25℃ 1
Drain Current ID 2.3 A Tj=100℃ 1
Gate Threshold Voltage (printed as gate-source voltage rating) VGS(TH) -30 30 V 1
Single Pulse Avalanche Energy EAS 300 mJ 1
Avalanche Current IAR 4 A 1
Power Dissipation PD 30 W Tj=25℃ 1
Junction Temperature (Max) Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Maximum lead temperature for soldering purpose TL 300 ℃ 1/8 inch from case for 5 seconds 1
Thermal Resistance, Junction to Case RθJC 4.16 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 700 V ID=250μA，VGS=0 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=700V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS=560V, Tj=125℃ 2
Gate-body leakage Current, Forward IGSSF 100 nA VGS=+30V, VDS=0V 2
Gate-body leakage Current, Reverse IGSSR -100 nA VGS=-30V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 2 4 V ID=250μA,VDS=VGS 2
Input Capacitance Ciss 440 560 pF VDS=25V，VGS=0，f=1.0MHz 2
Output Capacitance Coss 65 85 pF VDS=25V，VGS=0，f=1.0MHz 2
Reverse Transfer Capacitance Crss 5.6 7.3 pF VDS=25V，VGS=0，f=1.0MHz 2
Turn-On Delay Time Td(on) 13 35 ns VDD=350V，ID=4A RG=25Ω (Note 3,4) 2
Turn-On Rise Time Tr 45 110 ns VDD=350V，ID=4A RG=25Ω (Note 3,4) 2
Turn-Off Delay Time Td(off) 25 60 ns VDD=350V，ID=4A RG=25Ω (Note 3,4) 2
Turn-Off Rise Time Tf 35 80 ns VDD=350V，ID=4A RG=25Ω (Note 3,4) 2
Total Gate Charge Qg 15 20 nC VDS=480V,VGS=10V，ID=4A (Note 3,4) 2
Max. Diode Forward Current Is 4 A 2
Max. Pulsed Forward Current ISM 16 A 2

CAD (KiCad official)

  • Symbol: WGF4N70SE
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wild Goose datasheet (7 pp, sha256 c9a3dd08ed93e1f6, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF