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SI2325DS-T1-E3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownSI2325DS-T1-E3
Vishay Intertech · MOSFETs · SOT-23
SI2325DS-T1-E3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; the gate-source voltage is limited to ±20 V per the absolute maximum ratings. |
| 2 | S | passive | Source terminal of the MOSFET; the continuous source (diode conduction) current is rated at -1.0 A at TA = 25 °C (5 s) and -0.6 A steady state. |
| 3 | D | passive | Drain terminal, which also provides the thermal connection from the package to the PC board; the drain-source voltage is -150 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -150 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate-Threshold Voltage | VGS(th) | -2.5 | -4.5 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -150 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | µA | VDS = -150 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -1.6 | A | VDS ≤ -15 V, VGS = 10 V | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 1 | 1.2 | Ω | VGS = -10 V, ID = -0.5 A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 1.05 | 1.3 | Ω | VGS = -6.0 V, ID = -0.5 A | 2 | |
| Diode Forward Voltage | VSD | 0.7 | -1.2 | V | IS = -1.0 A, VGS = 0 V | 2 | |
| Total Gate Charge | Qg | 7.7 | 12 | nC | VDS = -75 V, VGS = 10 V, ID ≅ -0.5 A | 2 | |
| Input Capacitance | Ciss | 340 | 510 | pF | VDS = -25 V, VGS = 0 V, f = 1 MHz | 2 | |
| Turn-On Delay Time | td(on) | 7 | 11 | ns | VDD = -75 V, RL = 75 Ω, ID ≅ -1.0 A, VGEN = -10 V, Rg = 6 Ω | 2 | |
| Rise Time | tr | 11 | 17 | ns | VDD = -75 V, RL = 75 Ω, ID ≅ -1.0 A, VGEN = -10 V, Rg = 6 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 16 | 25 | ns | VDD = -75 V, RL = 75 Ω, ID ≅ -1.0 A, VGEN = -10 V, Rg = 6 Ω | 2 | |
| Fall Time | tf | 11 | 17 | ns | VDD = -75 V, RL = 75 Ω, ID ≅ -1.0 A, VGEN = -10 V, Rg = 6 Ω | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 90 | 135 | nC | IF = 0.5 A, dI/dt = 100 A/µs | 2 | |
| Drain-Source Voltage | VDS | -150 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -0.69 | A | TJ = 150 °C, TA = 25 °C, t ≤ 5 s | 1 | ||
| Continuous Drain Current | ID | -0.53 | A | TJ = 150 °C, TA = 25 °C, steady state | 1 | ||
| Continuous Drain Current | ID | -0.55 | A | TJ = 150 °C, TA = 70 °C, t ≤ 5 s | 1 | ||
| Continuous Drain Current | ID | -0.43 | A | TJ = 150 °C, TA = 70 °C, steady state | 1 | ||
| Pulsed Drain Current | IDM | -1.6 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | -1 | A | t ≤ 5 s | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | -0.6 | A | steady state | 1 | ||
| Single Pulse Avalanche Current | IAS | 4.5 | A | L = 1.0 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 1.01 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 1.25 | W | TA = 25 °C, t ≤ 5 s | 1 | ||
| Maximum Power Dissipation | PD | 0.75 | W | TA = 25 °C, steady state | 1 | ||
| Maximum Power Dissipation | PD | 0.8 | W | TA = 70 °C, t ≤ 5 s | 1 | ||
| Maximum Power Dissipation | PD | 0.48 | W | TA = 70 °C, steady state | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 75 | 100 | °C/W | t ≤ 5 s | 1 | |
| Maximum Junction-to-Ambient | RthJA | 120 | 166 | °C/W | Steady state | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 40 | 50 | °C/W | Steady state | 1 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | pattern, a plane of copper overlies the drain pin and provides | 7 |
CAD (KiCad official)
- Symbol:
SI2325DS-T1-E3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2325ds-t1-e3-etched.step/si2325ds-t1-e3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2325ds-t1-e3.step/si2325ds-t1-e3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
2389829db5cb8fcf, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).