component
BCM857DS
Public Made by Adomby adom
Nexperia Bipolar Transistors - BJT, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownBCM857DS
Nexperia · Bipolar Transistors - BJT · TSOP-6
BCM857DS from Nexperia, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of transistor TR1 (PNP); VEBO limit -5 V, IC max -100 mA per transistor. |
| 2 | B1 | passive | Base of transistor TR1 (PNP); VCBO -50 V, VEBO -5 V limits. |
| 3 | C2 | passive | Collector of transistor TR2 (PNP); VCEO -45 V, IC max -100 mA, ICM -200 mA (tp ≤ 1 ms). |
| 4 | E2 | passive | Emitter of transistor TR2 (PNP); VEBO limit -5 V, IC max -100 mA per transistor. |
| 5 | B2 | passive | Base of transistor TR2 (PNP); VCBO -50 V, VEBO -5 V limits. |
| 6 | C1 | passive | Collector of transistor TR1 (PNP); VCEO -45 V, IC max -100 mA, ICM -200 mA (tp ≤ 1 ms). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | TSOP-6 |
| Category | Transistors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base cut-off current | ICBO | -15 | nA | VCB = -30 V; IE = 0 A; Tamb = 25 °C | 3 | ||
| Collector-base cut-off current | ICBO | -5 | µA | VCB = -30 V; IE = 0 A; Tj = 150 °C | 3 | ||
| Emitter-base cut-off current | IEBO | -100 | nA | VEB = -5 V; IC = 0 A; Tamb = 25 °C | 3 | ||
| DC current gain | hFE | 200 | 290 | 450 | VCE = -5 V; IC = -2 mA; Tamb = 25 °C | 3 | |
| Collector-emitter saturation voltage | VCEsat | -50 | -200 | mV | IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C | 3 | |
| Collector-emitter saturation voltage | VCEsat | -200 | -400 | mV | IC = -100 mA; IB = -5 mA; Tamb = 25 °C | 3 | |
| Base-emitter voltage | VBE | -600 | -650 | -700 | mV | VCE = -5 V; IC = -2 mA; Tamb = 25 °C | 3 |
| Base-emitter voltage | VBE | -760 | mV | VCE = -5 V; IC = -10 mA; Tamb = 25 °C | 3 | ||
| Collector capacitance | Cc | 2.2 | pF | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C | 3 | ||
| Transition frequency | fT | 100 | 175 | MHz | VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C | 3 | |
| DC current gain matching | hFE1/hFE2 | 0.9 | 1 | VCE = -5 V; IC = -2 mA; Tamb = 25 °C | 3 | ||
| Base-emitter voltage matching | VBE1−VBE2 | 2 | mV | VCE = -5 V; IC = -2 mA; Tamb = 25 °C | 3 | ||
| Collector-base voltage | VCBO | -50 | V | open emitter | 2 | ||
| Collector-emitter voltage | VCEO | -45 | V | open base | 2 | ||
| Emitter-base voltage | VEBO | -5 | V | open collector | 2 | ||
| Collector current | IC | -100 | mA | 2 | |||
| Peak collector current | ICM | -200 | mA | tp ≤ 1 ms; single pulse | 2 | ||
| Total power dissipation per transistor | Ptot | 250 | mW | Tamb ≤ 25 °C | 2 | ||
| Total power dissipation per device | Ptot | 380 | mW | Tamb ≤ 25 °C | 2 | ||
| Junction temperature | Tj | 150 | °C | 2 | |||
| Ambient temperature | Tamb | -65 | 150 | °C | 2 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 2 | ||
| Thermal resistance junction to ambient per transistor | Rth(j-a) | 500 | K/W | in free air | 3 | ||
| Thermal resistance junction to ambient per device | Rth(j-a) | 328 | K/W | in free air | 3 | ||
| Base-emitter saturation voltage | VBEsat | -760 | mV | IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C | 3 | ||
| Base-emitter saturation voltage | VBEsat | -920 | mV | IC = -100 mA; IB = -5 mA; Tamb = 25 °C | 3 | ||
| DC current gain | hFE | 250 | VCE = -5 V; IC = -10 µA; Tamb = 25 °C | 3 | |||
| Emitter capacitance | Ce | 10 | pF | VEB = -0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C | 3 | ||
| Noise figure | NF | 1.6 | dB | VCE = -5 V; IC = -0.2 mA; RS = 2 kΩ; f = 10 kHz to 15.7 kHz | 3 | ||
| Noise figure | NF | 3.1 | dB | VCE = -5 V; IC = -0.2 mA; f = 1 kHz; B = 200 Hz | 3 | ||
| VBE temperature coefficient | VBE | -2 | mV/K | VBE decreases by about 2 mV/K with increasing temperature | 3 | ||
| VBEsat temperature coefficient | VBEsat | -1.7 | mV/K | VBEsat decreases by about 1.7 mV/K with increasing temperature | 3 |
CAD (KiCad official)
- Symbol:
BCM857DS - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
bcm857ds-etched.step/bcm857ds-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcm857ds.step/bcm857ds.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (10 pp, sha256
ff7f8d088c0f95d2, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).