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VBZM75NF75

Public Made by Adom

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VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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VBZM75NF75

VBsemi Elec · MOSFETs · TO-220AB

VBZM75NF75 from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; gate-source voltage limited to ±20 V (VGS(th) 2.0 to 3.5 V at ID = 250 μA).
2 D passive Drain terminal; drain-source voltage rated 80 V with pulsed drain current up to 350 A (t = 100 μs).
3 S passive Source terminal; continuous source-drain diode current 75 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 80 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 2 3.5 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 80 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS = 80 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 85 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 7 mΩ VGS = 10 V, ID = 20 A 2
Drain-Source On-State Resistance RDS(on) 7.5 mΩ VGS = 6 V, ID = 15 A 2
Drain-Source On-State Resistance RDS(on) 9 mΩ VGS = 4.5 V, ID = 10 A 2
Gate Resistance Rg 0.5 1.3 2 Ω f = 1 MHz 2
Output Charge Qoss 57 86 nC VDS = 40 V, VGS = 0 V 2
Turn-On Delay Time td(on) 12 24 ns VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 8 16 ns VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 32 64 ns VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 7 14 ns VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 14 28 ns VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 6.0 V, Rg = 1 Ω 2
Rise Time tr 11 22 ns VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 6.0 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 30 60 ns VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 6.0 V, Rg = 1 Ω 2
Fall Time tf 8 16 ns VDD = 40 V, RL = 4 Ω, ID ≅ 10 A, VGEN = 6.0 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 75 A TC = 25 °C 2
Pulse Diode Forward Current ISM 150 A t = 100 μs 2
Body Diode Voltage VSD 0.76 1.1 V IS = 5 A 2
Body Diode Reverse Recovery Time trr 38 75 ns IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 36 70 nC IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C 2
Drain-Source Voltage VDS 80 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Pulsed Drain Current IDM 350 A t = 100 μs 1
Single Pulse Avalanche Current IAS 30 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 45 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 180 W TC = 25 °C 1
Maximum Power Dissipation PD 120 W TC = 70 °C 1
Maximum Power Dissipation PD 5 W TA = 25 °C 1
Maximum Power Dissipation PD 3.2 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C 1
Maximum Junction-to-Ambient RthJA 15 18 °C/W t ≤ 10 sec 1
Maximum Junction-to-Ambient RthJA 40 50 °C/W Steady State 1
Maximum Junction-to-Case RthJC 0.85 1.1 °C/W Steady State 1
VDS Temperature Coefficient ΔVDS/TJ 37 mV/°C ID = 250 μA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -6.1 mV/°C ID = 250 μA 2
Forward Transconductance gfs 60 S VDS = 10 V, ID = 20 A 2
Input Capacitance Ciss 3855 pF VDS = 40 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 1120 pF VDS = 40 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 376 pF VDS = 40 V, VGS = 0 V, f = 1 MHz 2
Total Gate Charge Qg 35.5 nC VDS = 40 V, VGS = 10 V, ID = 10 A 2
Gate-Source Charge Qgs 5.3 nC 2
Gate-Drain Charge Qgd 7.3 nC 2

CAD (KiCad official)

  • Symbol: VBZM75NF75
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: vbzm75nf75-etched.step / vbzm75nf75-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbzm75nf75.step / vbzm75nf75.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 a8a67c53e14fe4ad, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF