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Contents

README

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GBU1008

Changjing · Bridge Rectifiers · GBU

GBU1008 from Changjing, in a GBU. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 + passive Positive DC output of the bridge, marked + on the package drawing at the left-most lead; rated IO 10A with heatsink (Tc=80°C), 3.0A without heatsink (Ta=25°C).
2 AC1 passive AC input of the bridge (second lead from the + end); VRRM 1000V for GBU1010, 800V for GBU1008, VRMS 560V for the GBU1008 grade.
3 AC2 passive AC input of the bridge (third lead, next to the - lead); VRRM 800V and VRMS 560V for the GBU1008 grade, peak surge IFSM 220A (60Hz, 1 cycle).
4 - passive Negative DC output of the bridge, marked - on the package drawing at the right-most lead; peak forward voltage 1.0V max per diode at IFM=5A.

Key specifications

Parameter Value
Manufacturer Changjing
Package GBU
Category Diodes
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive Peak Reverse Voltage VRRM 800 V 1
Maximum RMS Voltage VRMS 560 V 1
Average Rectified Output Current (with heatsink) IO 10 A 60Hz sine wave, R-load, with heatsink Tc=80℃ 1
Average Rectified Output Current (without heatsink) IO 3 A 60Hz sine wave, R-load, without heatsink Ta=25℃ 1
Surge (Non-repetitive) Forward Current IFSM 220 A 60Hz sine wave, 1 cycle, Tj=25℃ 1
Current Squared Time I2t 200 A2S 1ms≤t<8.3ms, Tj=25℃, rating per diode 1
Storage Temperature Tstg -55 150 ℃ 1
Junction Temperature Tj -55 150 ℃ 1
Dielectric Strength Vdis 2 KV Terminals to case, AC 1 minute 1
Mounting Torque Tor 5 8 kg·cm Recommended torque 5kg·cm; printed value 8 in same row 1
Peak Forward Voltage VFM 1 V IFM=5A, pulse measurement, rating of per diode 1
Peak Reverse Current IRRM 10 μA VRM=VRRM, pulse measurement, rating of per diode 1
Thermal Resistance, junction to ambient RθJ-A 25 ℃/W Between junction and ambient, without heatsink 1
Thermal Resistance, junction to case RθJ-C 2.3 ℃/W Between junction and case, with heatsink 1

CAD (KiCad official)

  • Symbol: GBU1008
  • Footprint: Diode_THT:Diode_Bridge_Vishay_GBU
  • 3D model: GBU (KiCad packages3D, STEP)
  • 3D model files: gbu1008-etched.step / gbu1008-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gbu1008.step / gbu1008.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (3 pp, sha256 6effd14b34ccffe1, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF