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Contents

README

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CMP70N06

Cmos(广东场效应半导体) · MOSFETs · TO-220

CMP70N06 from Cmos(广东场效应半导体), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate, with a gate-source voltage rating of ±20 V and a threshold of 1.0 to 3.0 V at ID=250uA.
2 D passive Drain, rated for 60 V drain-source voltage and 70 A continuous current at TC=25°C (280 A pulsed).
3 S passive Source, the current return terminal of the N-channel MOSFET, with a body-diode continuous current of 70 A.

Key specifications

Parameter Value
Manufacturer Cmos(广东场效应半导体)
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 70 A TC=25℃ 1
Continuous Drain Current ID@TC=100℃ 48 A TC=100℃ 1
Pulsed Drain Current IDM 280 A 1
Single Pulse Avalanche Energy EAS 350 mJ Note 1: VDD=40V, VGS=10V, L=1mH, IAS=26.5A 1
Total Power Dissipation PD@TC=25℃ 145 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-case RθJC 0.86 ℃/W TO-220/263/262 column 1
Thermal Resistance Junction-ambient RθJA 62.5 ℃/W TO-220/263/262 column 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 14 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 13 17 mΩ VGS=4.5V, ID=10A 2
Gate Threshold Voltage VGS(th) 1 3 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=60V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 70 A 2
Pulsed Source Current ISM 280 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=20A, TJ=25℃ 2
Forward Transconductance gfs 28 S VDS=10V, ID=20A 2
Gate Resistance Rg 3.8 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 110 nC 2
Gate-Source Charge Qgs 15 nC 2
Gate-Drain Charge Qgd 30 nC 2
Turn-On Delay Time Td(on) 50 ns 2
Rise Time Tr 155 ns 2
Turn-Off Delay Time Td(off) 45 ns 2
Fall Time Tf 220 ns 2
Input Capacitance Ciss 3300 pF VDS=25V, VGS=0V, f=1MHz 2
Output Capacitance Coss 260 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 180 pF VDS=25V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: CMP70N06
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: cmp70n06-etched.step / cmp70n06-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmp70n06.step / cmp70n06.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos(广东场效应半导体) datasheet (7 pp, sha256 7ae5c33b09b679ae, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF