component
CMS10NP02
Public Made by Adomby adom
Cmos(广东场效应半导体) , SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCMS10NP02
Cmos(广东场效应半导体) · IC · SOP-8
CMS10NP02 from Cmos(广东场效应半导体), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (20V, 10A continuous at TA=25°C). |
| 2 | G1 | input | Gate of the N-channel MOSFET, VGS rated ±16V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-20V, -10A continuous at TA=25°C). |
| 4 | G2 | input | Gate of the P-channel MOSFET, VGS rated ±16V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET, VDS rated -20V; pins 5 and 6 are both D2. |
| 6 | D2 | passive | Drain of the P-channel MOSFET, VDS rated -20V; pins 5 and 6 are both D2. |
| 7 | D1 | passive | Drain of the N-channel MOSFET, VDS rated 20V; pins 7 and 8 are both D1. |
| 8 | D1 | passive | Drain of the N-channel MOSFET, VDS rated 20V; pins 7 and 8 are both D1. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | SOP-8 |
| Category | |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDS | 20 | V | 1 | |||
| Drain-Source Voltage (P-channel) | VDS | -20 | V | 1 | |||
| Gate-Source Voltage (N-channel) | VGS | -16 | 16 | V | 1 | ||
| Gate-Source Voltage (P-channel) | VGS | -16 | 16 | V | 1 | ||
| Continuous Drain Current at TA=25℃ (N-channel) | ID | 10 | A | TA=25℃ | 1 | ||
| Continuous Drain Current at TA=25℃ (P-channel) | ID | -10 | A | TA=25℃ | 1 | ||
| Continuous Drain Current at TA=100℃ (N-channel) | ID | 7 | A | TA=100℃ | 1 | ||
| Continuous Drain Current at TA=100℃ (P-channel) | ID | -7 | A | TA=100℃ | 1 | ||
| Pulsed Drain Current (N-channel) | IDM | 40 | A | 1 | |||
| Pulsed Drain Current (P-channel) | IDM | -40 | A | 1 | |||
| Single Pulse Avalanche Energy (N-channel) | EAS | 42 | mJ | VDD=15V, VGS=10V, L=0.5mH, IAS=10A (note 1) | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage (N-channel) | BVDSS | 20 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance (N-channel) | RDS(ON) | 13 | 15 | mΩ | VGS=4.5V, ID=6.5A | 2 | |
| Static Drain-Source On-Resistance (N-channel) | RDS(ON) | 16 | 20 | mΩ | VGS=2.5V, ID=5.5A | 2 | |
| Gate Threshold Voltage (N-channel) | VGS(th) | 0.3 | 1.1 | V | VGS=VDS, ID=250μA | 2 | |
| Drain-Source Leakage Current (N-channel) | IDSS | 1 | uA | VDS=16V, VGS=0V, TJ=25℃ | 2 | ||
| Gate-Source Leakage Current (N-channel) | IGSS | -100 | 100 | nA | VGS=±10V, VDS=0V | 2 | |
| Diode Continuous Forward Current (N-channel) | IS | 10 | A | 2 | |||
| Diode Pulse Current (N-channel) | IS,pulse | 40 | A | 2 | |||
| Diode Forward Voltage (N-channel) | VSD | 0.74 | 1.2 | V | VGS=0V, IF=1A, Tj=25℃ | 2 | |
| Drain-Source Breakdown Voltage (P-channel) | BVDSS | -20 | V | VGS=0V, ID=-250μA | 3 | ||
| Static Drain-Source On-Resistance (P-channel) | RDS(ON) | 28 | 33 | mΩ | VGS=-4.5V, ID=-6.5A | 3 | |
| Static Drain-Source On-Resistance (P-channel) | RDS(ON) | 43 | 55 | mΩ | VGS=-2.5V, ID=-5.5A | 3 | |
| Gate Threshold Voltage (P-channel) | VGS(th) | -0.5 | -1.5 | V | VGS=VDS, ID=-250μA | 3 | |
| Drain-Source Leakage Current (P-channel) | IDSS | -1 | uA | VDS=-16V, VGS=0V | 3 | ||
| Gate-Source Leakage Current (P-channel) | IGSS | -100 | 100 | nA | VGS=±10V, VDS=0V | 3 | |
| Continuous Source Current (P-channel) | IS | -10 | A | 3 | |||
| Pulsed Source Current (P-channel) | ISM | -40 | A | VG=VD=0V, Force Current | 3 | ||
| Diode Forward Voltage (P-channel) | VSD | -0.77 | -1.2 | V | VGS=0V, IF=-1A, TJ=25℃ | 3 |
CAD (KiCad official)
- Symbol:
CMS10NP02 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
cms10np02-etched.step/cms10np02-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cms10np02.step/cms10np02.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (5 pp, sha256
a065a98372f5a4c7, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).