component
4N36
Public Made by Adomby adom
Vishay Intertech Transistor, Photovoltaic Output Optoisolators, DIP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown4N36
Vishay Intertech · Transistor, Photovoltaic Output Optoisolators · DIP-6
4N36 from Vishay Intertech, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | passive | LED anode of the gallium arsenide infrared emitter; the input is rated for 50 mA forward current, 6 V reverse voltage, and 1 A surge current for t ≤ 10 µs. |
| 2 | C | passive | LED cathode of the gallium arsenide infrared emitter, sharing the same 50 mA forward current and 6 V reverse voltage input ratings. |
| 3 | NC | unconnected | Marked NC in the pin diagram; the datasheet gives no function for this pin. |
| 4 | E | passive | Emitter of the silicon NPN phototransistor, with an emitter-base breakdown voltage (VEBO) of 7 V. |
| 5 | C | passive | Collector of the silicon NPN phototransistor, rated for a collector-emitter breakdown voltage (VCEO) of 70 V and a collector current of 50 mA (100 mA for t ≤ 1 ms). |
| 6 | B | input | Base connection of the NPN phototransistor; the datasheet gives no base voltage or current limit for this pin. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | DIP-6 |
| Category | Optoisolators |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage | VF | 1.3 | 1.5 | V | IF = 10 mA | 2 | |
| Forward voltage | VF | 0.9 | 1.3 | 1.7 | V | IF = 10 mA, Tamb = - 55 °C | 2 |
| Reverse current | IR | 0.1 | 10 | μA | VR = 6 V | 2 | |
| DC current transfer ratio | CTRDC | 100 | % | VCE = 10 V, IF = 10 mA | 3 | ||
| DC current transfer ratio | CTRDC | 40 | 50 | % | VCE = 10 V, IF = 10 mA, TA = - 55 °C to + 100 °C | 3 | |
| Collector emitter leakage current | ICEO | 5 | 50 | nA | VCE = 10 V, IF = 0 | 2 | |
| Reverse voltage | VR | 6 | V | 1 | |||
| Forward current | IF | 50 | mA | 1 | |||
| Surge current | IFSM | 1 | A | t ≤ 10 μs | 1 | ||
| Power dissipation (input) | Pdiss | 70 | mW | 1 | |||
| Collector emitter breakdown voltage | VCEO | 70 | V | 1 | |||
| Emitter base breakdown voltage | VEBO | 7 | V | 1 | |||
| Collector current | IC | 50 | mA | 1 | |||
| Collector current | IC | 100 | mA | t ≤ 1 ms | 1 | ||
| Power dissipation (output) | Pdiss | 70 | mW | 1 | |||
| Isolation test voltage | VISO | 5000 | VRMS | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Operating temperature | Tamb | -55 | 100 | °C | 2 | ||
| Junction temperature | Tj | 100 | °C | 2 | |||
| Soldering temperature | Tsld | 260 | °C | max. 10 s dip soldering; distance to seating plane ≥ 1.5 mm | 2 |
CAD (KiCad official)
- Symbol:
4N36 - Footprint:
Package_DIP:DIP-6_W7.62mm - 3D model: DIP-6 (KiCad packages3D, STEP)
- 3D model files:
4n36-etched.step/4n36-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);4n36.step/4n36.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (7 pp, sha256
e9aa76f610fc0f55, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).