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BCV 62C E6327
Public Made by Adomby adom
Infineon Technologies Bipolar Transistors - BJT, SOT-143. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBCV 62C E6327
Infineon Technologies · Bipolar Transistors - BJT · SOT-143
BCV 62C E6327 from Infineon Technologies, in a SOT-143. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C2 | passive | Collector of transistor Tr.2, the diode-connected reference side of the current mirror; the datasheet lists VCEO 30 V and IC 100 mA maximum ratings for the transistors. |
| 2 | C1 | passive | Collector of transistor Tr.1, the mirror output; rated VCEO 30 V, VCBO 30 V, IC 100 mA continuous and ICM 200 mA peak. |
| 3 | E1 | passive | Emitter of transistor Tr.1; emitter-base voltage VEBS is limited to 6 V. |
| 4 | E2 | passive | Emitter of transistor Tr.2; emitter-base voltage VEBS is limited to 6 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-143 |
| Category | Transistors |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage (T1) | VCEO | 30 | V | 1 | |||
| Collector-base voltage (T1) | VCBO | 30 | V | open emitter | 1 | ||
| Emitter-base voltage | VEBS | 6 | V | 1 | |||
| DC collector current | IC | 100 | mA | 1 | |||
| Peak collector current | ICM | 200 | mA | 1 | |||
| Base peak current (T1) | IBM | 200 | mA | 1 | |||
| Total power dissipation | Ptot | 300 | mW | TS = 99 °C | 1 | ||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Storage temperature | Tstg | -65 | 150 | °C | 1 | ||
| Thermal resistance junction - soldering point | RthJS | 170 | K/W | 1 | |||
| Collector-emitter breakdown voltage | V(BR)CEO | 30 | V | IC = 10 mA, IB = 0 | 2 | ||
| Collector-base breakdown voltage | V(BR)CBO | 30 | V | IC = 10 µA, IE = 0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE = 10 µA, IC = 0 | 2 | ||
| Collector cutoff current | ICBO | 15 | nA | VCB = 30 V, IE = 0 | 2 | ||
| Collector cutoff current | ICBO | 5 | µA | VCB = 30 V, IE = 0, TA = 150 °C | 2 | ||
| DC current gain | hFE | 100 | - | IC = 0.1 mA, VCE = 5 V | 2 | ||
| DC current gain (BCV62C) | hFE | 420 | 520 | 800 | - | IC = 2 mA, VCE = 5 V | 2 |
| Collector-emitter saturation voltage | VCEsat | 75 | 300 | mV | IC = 10 mA, IB = 0.5 mA | 2 | |
| Collector-emitter saturation voltage | VCEsat | 250 | 650 | mV | IC = 100 mA, IB = 5 mA | 2 | |
| Base-emitter saturation voltage | VBEsat | 700 | mV | IC = 10 mA, IB = 0.5 mA | 2 | ||
| Base-emitter saturation voltage | VBEsat | 850 | mV | IC = 100 mA, IB = 5 mA | 2 | ||
| Base-emitter voltage | VBE(ON) | 600 | 650 | 750 | mV | IC = 2 mA, VCE = 5 V | 2 |
| Base-emitter voltage | VBE(ON) | 820 | mV | IC = 10 mA, VCE = 5 V | 2 | ||
| Base-emitter forward voltage | VBES | 0.4 | V | IE = 10 µA | 3 | ||
| Base-emitter forward voltage | VBES | 1.8 | V | IE = 250 mA | 3 | ||
| Matching of T1 and T2 | IC1/IC2 | 0.7 | 1.3 | - | IE2 = 0.5 mA, VCE1 = 5 V, TA = 25 °C | 3 | |
| Maximum current of thermal stability of IC1 | IE2 | 5 | mA | T1: VCE = 5 V | 3 | ||
| Transition frequency | fT | 250 | MHz | IC = 10 mA, VCE = 5 V, f = 100 MHz | 3 | ||
| Collector-base capacitance | Ccb | 1.5 | pF | VCB = 10 V, f = 1 MHz | 3 | ||
| Emitter-base capacitance | Ceb | 8 | pF | VEB = 0.5 V, f = 1 MHz | 3 | ||
| Noise figure | F | 2 | dB | IC = 200 µA, VCE = 5 V, RS = 2 kΩ, f = 1 kHz, Δf = 200 Hz | 3 | ||
| Short-circuit input impedance | h11e | 4.5 | kΩ | IC = 1 mA, VCE = 10 V, f = 1 kHz | 3 | ||
| Open-circuit reverse voltage transfer ratio | h12e | 2 | 10-4 | IC = 1 mA, VCE = 10 V, f = 1 kHz | 3 | ||
| Short-circuit forward current transfer ratio | h21e | 100 | 900 | - | IC = 1 mA, VCE = 10 V, f = 1 kHz | 3 | |
| Open-circuit output admittance | h22e | 30 | µS | IC = 1 mA, VCE = 10 V, f = 1 kHz | 3 |
CAD (KiCad official)
- Symbol:
BCV 62C E6327 - Footprint:
Package_TO_SOT_SMD:SOT-143 - 3D model: SOT-143 (KiCad packages3D, STEP)
- 3D model files:
bcv-62c-e6327-etched.step/bcv-62c-e6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcv-62c-e6327.step/bcv-62c-e6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (7 pp, sha256
49d24235cea2f916, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).