component
DOD65P04
Public Made by Adomby adom
DOINGTER MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDOD65P04
DOINGTER · MOSFETs · TO-252
DOD65P04 from DOINGTER, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with threshold VGS(th) of -1 V min, -1.7 V typ, -2.5 V max at ID=250μA. |
| 2 | D | passive | Drain (also the exposed tab); continuous drain current -65 A and pulsed -252 A, with RDS(ON) typ 9 mΩ, max 11 mΩ at VGS=-10V. |
| 3 | S | passive | Source of the P-channel MOSFET; the body diode runs from drain to source with VSD max -1.2 V at ISD=-15A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Continuous Drain Current | ID | -65 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | -44.8 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -252 | A | 1 | |||
| Power Dissipation | PD | 79 | W | TC=25℃ | 1 | ||
| Single pulse avalanche energy | EAS | 272 | mJ | 1 | |||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction to Case | ƟJC | 1.9 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VGS=0V, VDS=-40V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -1 | -1.7 | -2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | 9 | 11 | mΩ | VGS=-10V,ID=-15A | 2 | |
| Drain-Source On Resistance | RDS(ON) | 13.5 | 17.5 | mΩ | VGS=-4.5V,ID=-10A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, ISD=-15A | 2 | ||
| Continuous Drain Current | IS | -65 | A | VD=VG=0V | 2 | ||
| Pulsed Drain Current | ISM | -252 | A | 2 |
CAD (KiCad official)
- Symbol:
DOD65P04 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
dod65p04-etched.step/dod65p04-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dod65p04.step/dod65p04.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DOINGTER datasheet (6 pp, sha256
1e99cd9ec6f57938, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).