component
TM04G03MI6
Public Made by Adomby adom
Tritech MOS MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTM04G03MI6
Tritech MOS · MOSFETs · SOT-23-6L
TM04G03MI6 from Tritech MOS, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±20 V (N-channel rating). |
| 2 | S2 | passive | Source of MOSFET 2; the P-channel is rated VDS -30 V and ID -3.9 A. |
| 3 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±20 V (P-channel rating). |
| 4 | D2 | passive | Drain of MOSFET 2; the P-channel is rated VDS -30 V and ID -3.9 A. |
| 5 | S1 | passive | Source of MOSFET 1; the N-channel is rated VDS 30 V and ID 5.6 A. |
| 6 | D1 | passive | Drain of MOSFET 1; the N-channel is rated VDS 30 V and ID 5.6 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech MOS |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 30 | V | TC=25℃ (N-Channel) | 1 | ||
| Drain-Source Voltage (P-Channel) | VDS | -30 | V | TC=25℃ (P-Channel) | 1 | ||
| Gate-Source Voltage (N-Channel) | VGS | -20 | 20 | V | TC=25℃ (N-Channel) | 1 | |
| Gate-Source Voltage (P-Channel) | VGS | -20 | 20 | V | TC=25℃ (P-Channel) | 1 | |
| Continuous Drain Current (N-Channel) | ID | 5.6 | A | TC=25℃ | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -3.9 | A | TC=25℃ | 1 | ||
| Continuous Drain Current at TC=100℃ (N-Channel) | ID | 3.6 | A | TC=100℃ | 1 | ||
| Continuous Drain Current at TC=100℃ (P-Channel) | ID | -2.6 | A | TC=100℃ | 1 | ||
| Power Dissipation (N-Channel) | PD | 1.4 | W | TC=25℃ | 1 | ||
| Power Dissipation (P-Channel) | PD | 1.4 | W | TC=25℃ | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 175 | ℃ | 1 | ||
| Pulsed Drain Current (N-Channel) | IDM | 21 | A | 300μs pulsed | 1 | ||
| Pulsed Drain Current (P-Channel) | IDM | -15 | A | 300μs pulsed | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 85 | ℃/W | TC=25℃ | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 50 | ℃/W | TC=25℃ | 1 | ||
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 30 | V | VGS=0V, IDS=250μA | 2 | ||
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -30 | V | VGS=0V, IDS=-250μA | 3 | ||
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 1 | μA | VDS=24V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current at TJ=85°C (N-Channel) | IDSS | 30 | μA | VDS=24V, VGS=0V, TJ=85°C | 2 | ||
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -1 | μA | VDS=-24V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current at TJ=85°C (P-Channel) | IDSS | -30 | μA | VDS=-24V, VGS=0V, TJ=85°C | 3 | ||
| Gate Threshold Voltage (N-Channel) | VGS(th) | 1.5 | 2.5 | V | VDS=VGS, IDS=250μA | 2 | |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -1.5 | V | VDS=VGS, IDS=-250μA | 3 | ||
| Gate Leakage Current (N-Channel) | IGSS | -100 | 100 | A | VGS=±20V, VDS=0V | 2 | |
| Gate Leakage Current (P-Channel) | IGSS | -100 | 100 | A | VGS=±20V, VDS=0V | 3 | |
| Diode Forward Voltage (N-Channel) | VSD | 0.75 | 1.1 | V | ISD=1A, VGS=0V | 2 | |
| Diode Forward Voltage (P-Channel) | VSD | -0.75 | -1.1 | V | ISD=-1A, VGS=0V | 3 | |
| Turn-on Delay Time (N-Channel) | td(ON) | 5.3 | 8 | ns | VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω | 2 | |
| Turn-on Rise Time (N-Channel) | Tr | 11 | 16 | ns | VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω | 2 | |
| Turn-off Delay Time (N-Channel) | td(OFF) | 12 | 17 | ns | VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω | 2 | |
| Turn-off Fall Time (N-Channel) | Tf | 2.6 | 4 | ns | VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω | 2 |
CAD (KiCad official)
- Symbol:
TM04G03MI6 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
tm04g03mi6-etched.step/tm04g03mi6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tm04g03mi6.step/tm04g03mi6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tritech MOS datasheet (12 pp, sha256
61b2e7ba24e872b5, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).