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Contents

README

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TPD2S701QDSKRQ1

Texas Instruments · USB Converters · SON-10-EP(2.5x2.5)

TPD2S701QDSKRQ1 from Texas Instruments, in a SON-10-EP(2.5x2.5). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VD- bidirectional High-voltage D- USB data line that connects to the USB connector, with IEC61000-4-2 ESD protection; the VD+/VD- voltage range is -0.3 V to 7.7 V.
2 VD+ bidirectional High-voltage D+ USB data line that connects to the USB connector, with IEC61000-4-2 ESD protection; the VD+/VD- voltage range is -0.3 V to 7.7 V.
3 GND power_in Ground pin for the internal circuits and the IEC ESD clamps.
4 FLT output Open-drain fault pin that is asserted low on overvoltage or thermal shutdown and is pulled high externally; the absolute maximum voltage is 7.7 V.
5 EN input Active-low enable input: driving EN low enables the data switches and driving it high disables them; the absolute maximum voltage is 7.7 V.
6 MODE input Selects the device mode (Mode 0 when the resistance to GND is at most 2.6 kΩ, Mode 1 when Rtop
7 VPWR power_in 5-V DC supply input for the internal circuits, to be connected to the internal power rail on the PCB; the absolute maximum rating is -0.3 V to 7.7 V.
8 VREF power_in Pin that sets the OVP threshold, with an absolute maximum range of -0.3 V to 6 V; it is driven by an external regulator in Mode 0 or by the internal adjustable regulator in Mode 1 (0.6 V to 3.8 V).
9 D+ bidirectional Protected low-voltage D+ USB data line that connects to the transceiver, with an internal range of up to VREF + 0.3 V.
10 D- bidirectional Protected low-voltage D- USB data line that connects to the transceiver, with an internal range of up to VREF + 0.3 V.
11 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SON-10-EP(2.5x2.5)
Category Interface
Pins 11

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VPWR 5-V DC supply voltage for internal circuitry VPWR -0.3 7.7 V 4
Pin to set OVP threshold VREF -0.3 6 V 4
Voltage range from connector-side USB data lines VD+, VD- -0.3 7.7 V 4
Voltage range for internal USB data lines D+, D- -0.3 V Printed maximum is VREF + 0.3 V 4
Voltage on MODE pin VMODE -0.3 7.7 V 4
Voltage on FLT pin VFLT -0.3 7.7 V 4
Voltage on enable pin VEN -0.3 7.7 V 4
Operating free air temperature TA -40 125 °C 4
Storage temperature TSTG -65 150 °C 4
5-V DC supply voltage for internal circuitry VPWR 4.5 7 V 5
Voltage range for VREF pin (for setting OVP threshold) VREF 3 3.6 V Mode 0 5
Voltage range for VREF pin (for setting OVP threshold) VREF 0.63 3.8 V Mode 1 5
Voltage range from connector-side USB data lines VD+, VD- 0 3.6 V 5
Voltage range for internal USB data lines D+, D- 0 3.6 V 5
Voltage range for enable VEN 0 7 V 5
Voltage range for FLT VFLT 0 7 V 5
Current into open drain FLT pin FET IFLT 0 3 mA 5
VPWR capacitance CVPWR 1 10 µF External capacitor on VPWR pin 5
VREF capacitance CVREF 0.3 1 3 µF External capacitor on VREF pin 5
Allowed parasitic capacitance on mode pin from PCB and mode 1 external resistors CMODE 20 pF 5
Resistance to GND to set to mode 0 RMODE_0 2 2.6 kΩ 5
Resistance to GND to set to mode 1 RMODE_1 14 20 kΩ Calculate parallel combination of RTOP and RBOT 5
Mode 1 VREF feedback regulator voltage VMODE_CMP 0.47 0.5 0.53 V Standard mode 1 set-up. EN = 0 V. Once VREF = 3.3 V, measure voltage on mode pin 6
Mode pin mode 1 leakage current IMODE_LEAK 50 200 nA Standard mode 1, RTOP and RBOT removed. Force 0.53 V on MODE pin, measure current into pin 6
VREF accuracy VREF_ACCURACY -8 8 % Informative; accuracy with RTOP and RBOT as ±1% resistors 6
Mode 1 VREF set to 3.3 V VREF_3.3V 3.04 3.31 3.58 V Standard mode 1 set-up. RTOP = 140 kΩ ± 1%, RBOT = 24.9 kΩ ± 1%. EN = 0. Measure VREF once it settles 6
Mode 1 VREF set to 0.66 V VREF_0.66V 0.6 0.66 0.72 V Standard mode 1 set-up. RTOP = 47.5 kΩ ± 1%, RBOT = 150 kΩ ± 1%. EN = 0. Measure VREF once it settles 6
Mode 1 VREF set to 3.8 V VREF_3.8V 3.5 3.81 4.12 V Standard mode 1 set-up. RTOP = 165 kΩ ± 1%, RBOT = 24.9 kΩ ± 1%. EN = 0. Measure VREF once it settles 6
High-level input voltage EN VIH 1.2 V Mode 0. VPWR = 5 V; VREF = 3.3 V; VD+ = 3.3 V; sweep EN from 0 V to 1.4 V 6
Low-level input voltage EN 0.8 V Mode 0. VPWR = 5 V; VREF = 3.3 V; VD+ = 3.3 V; sweep EN from 3.3 V to 0.5 V 6
Input leakage current EN IIL 1 µA Mode 0. VPWR = 5 V; VREF = 3.3 V; VI(EN) = 3.3 V; measure current into EN pin 6
Low-level output voltage FLT VOL 0.4 V Mode 0. Drive into OVP to assert FLT; source IOL = 1 mA into FLT pin 6
The rising over temperature protection shutdown threshold TSD_RISING 140 150 165 °C VPWR = 5 V, ENZ = 0 V, TA stepped up until FLTZ is asserted 6
The falling over temperature protection shutdown threshold TSD_FALLING 125 138 150 °C VPWR = 5 V, ENZ = 0 V, TA stepped down from TSD_RISING until FLTZ is cleared 6
The over temperature protection shutdown threshold hysteresis TSD_HYST 10 12 15 °C TSD_RISING, TSD_FALLING 6
Input overvoltage protection threshold, VREF > 3.6 V VOVP_RISING 4.3 4.5 4.7 V Mode 1. VPWR = 5 V; EN = 0 V; RTOP = 165 kΩ, RBOT = 24.9 kΩ; D± into 40-Ω load; VD± increased from 4.1 V to 4.9 V 6
Input overvoltage protection threshold VD± VOVP_RISING 1.19 1.25 1.31 ×VREF Mode 1. VPWR = 5 V; EN = 0 V; RTOP = 140 kΩ, RBOT = 24.9 kΩ (also 39 kΩ / 150 kΩ) 6
Leakage current on VD± during normal operation IVD_LEAK_0V -0.1 0.1 µA Standard mode 0 or mode 1. VD± = 0 V; D± floating 6
Leakage current on VD± during normal operation IVD_LEAK_3.6V 2.5 4 µA Standard mode 0 or mode 1. VD± = 3.6 V; D± floating 7
Input overvoltage threshold for VREF = 3.3 V VOVP_3.3V 3.61 4.14 4.67 V Standard mode 1. RTOP = 140 kΩ ± 1%, RBOT = 24.9 kΩ ± 1%. D± into 40-Ω load 7
Input overvoltage threshold for VREF = 0.66 V VOVP_0.66V 0.72 0.83 0.94 V Standard mode 1. RTOP = 47.5 kΩ ± 1%, RBOT = 150 kΩ ± 1%. D± into 40-Ω load 7
On resistance RON 4 6.5 Ω Mode 0 or 1. VPWR = 5 V; VREF = 3.3 V; EN = 0 V; voltage between 0 and 0.4 V 7
On resistance flatness RON(Flat) 1 Ω Mode 0 or 1. VPWR = 5 V; VREF = 3.3 V; EN = 0 V; difference of resistance at 0.4 V and 0 V bias 7
VPWR rising UVLO threshold VUVLO_RISING_VPWR 3.7 3.95 4.2 V Standard mode 0. EN = 0 V; D+ loaded to 45 Ω; VD+ = 3.3 V; step VPWR up until 90% of VD+ appears on D+ 7
VPWR UVLO hysteresis VUVLO_HYST_VPWR 250 300 400 mV Standard mode 0. EN = 0 V; D+ loaded to 45 Ω; VD+ = 3.3 V 7
VREF rising UVLO threshold in mode 0 VUVLO_RISING_VREF 2.6 2.7 2.9 V Standard mode 0. EN = 0 V; D+ loaded to 45 Ω; VD+ = 3.3 V; step VREF up until 90% of VD+ appears on D+ 7
VREF UVLO hysteresis VUVLO_HYST_VREF 75 125 200 mV Standard mode 0. EN = 0 V; D+ loaded to 45 Ω; VD+ = 3.3 V 7
VPWR disabled current consumption IVPWR_DISABLE_MODE0 110 µA Standard mode 0. EN = 5 V. Measure current into VPWR 7
VREF disabled current consumption mode 0 IVREF_DISABLE_MODE0 10 µA Standard mode 0. EN = 5 V. Measure current into VREF 7
VPWR operating current consumption IVPWR_MODE0 250 µA Standard mode 0. EN = 0 V. Measure current into VPWR 7
VPWR operating current consumption IVPWR_MODE1 350 µA Standard mode 1. EN = 0 V. Measure current into VPWR 7
VREF operating current consumption mode 0 IVREF 12 20 µA Standard mode 0. EN = 0 V. Measure current into VREF 7
Mode 0 leakage into D+ or D- supply (off state) ID_OFF_LEAK_STB -1 1 µA Mode 0. Measured flowing into D+ or D- supply, VPWR = 0 V, VD± = 18 V, EN = 0 V, VREF = 0 V, D± = 0 V 8
Mode 0 leakage into D+ or D- supply (on state) ID_ON_LEAK_STB -1 1 µA Mode 0. Measured flowing into D+ or D- supply, VPWR = 5 V, VD± = 18 V, EN = 0 V, VREF = 3.3 V, D± = 0 V 8
Mode 0 leakage out of VD+ or VD- supply (on state) IVD_ON_LEAK_STB 120 µA Mode 0. Measured flowing out of VD+ or VD- supply, VPWR = 5 V, VD± = 18 V, EN = 0 V, VREF = 3.3 V, D± = 0 V 8
Junction-to-ambient thermal resistance θJA 61.5 °C/W DSK (WSON), 10 pins 5
Junction-to-case (top) thermal resistance θJCtop 51.3 °C/W DSK (WSON), 10 pins 5
Junction-to-board thermal resistance θJB 34 °C/W DSK (WSON), 10 pins 5
Junction-to-case (bottom) thermal resistance θJCbot 7.7 °C/W DSK (WSON), 10 pins 5

CAD (KiCad official)

  • Symbol: TPD2S701QDSKRQ1
  • Footprint: Package_SON:WSON-10-1EP_2.5x2.5mm_P0.5mm_EP1.2x2mm
  • 3D model: SON-10-EP(2.5x2.5) (KiCad packages3D, STEP)
  • 3D model files: tpd2s701qdskrq1-etched.step / tpd2s701qdskrq1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tpd2s701qdskrq1.step / tpd2s701qdskrq1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (35 pp, sha256 355ef577b1bd4b7e, retrieved 2026-10-18, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF