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TPA2005D1DRBQ1
Public Made by Adomby adom
Texas Instruments Audio Power OpAmps, SON-8-EP(3x3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTPA2005D1DRBQ1
Texas Instruments · Audio Power OpAmps · SON-8-EP(3x3)
TPA2005D1DRBQ1 from Texas Instruments, in a SON-8-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SHUTDOWN | input | Shutdown terminal with active-low logic; VIH is 2 V to VDD and VIL is 0 V to 0.7 V. |
| 2 | NC | unconnected | No internal connection. |
| 3 | IN+ | input | Positive differential input. |
| 4 | IN- | input | Negative differential input. |
| 5 | VO+ | output | Positive BTL output. |
| 6 | VDD | power_in | Power supply, 2.5 V to 5.5 V recommended operating range, decoupled with a 0.1 µF ceramic capacitor within 2 mm. |
| 7 | GND | power_in | High-current ground. |
| 8 | VO- | output | Negative BTL output. |
| 9 | Thermal Pad | power_in | Exposed thermal pad that must be soldered to a grounded pad on the PCB and electrically and thermally connected to a ground plane. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SON-8-EP(3x3) |
| Category | Operational Amplifier/Comparator |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage (active mode) | VDD | -0.3 | 6 | V | In active mode | 4 | |
| Supply voltage (shutdown mode) | VDD | -0.3 | 7 | V | In SHUTDOWN mode | 4 | |
| Input voltage | VI | -0.3 | V | max = VDD + 0.3 V | 4 | ||
| Load resistance | RL | 3.2 | Ω | 2.5 ≤ VDD ≤ 4.2 V | 4 | ||
| Load resistance | RL | 6.4 | Ω | 4.2 < VDD ≤ 6 V | 4 | ||
| Operating free-air temperature | TA | -40 | 85 | °C | Non T-suffix | 4 | |
| Operating junction temperature | TJ | -40 | 150 | °C | 4 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 4 | ||
| ESD HBM | V(ESD) | -2000 | 2000 | V | Human-body model, AEC Q100-002 | 4 | |
| ESD CDM | V(ESD) | -1000 | 1000 | V | Charged-device model, AEC Q100-011 | 4 | |
| Supply voltage | VDD | 2.5 | 5.5 | V | 4 | ||
| High-level input voltage | VIH | 2 | V | SHUTDOWN; max = VDD | 4 | ||
| Low-level input voltage | VIL | 0 | 0.7 | V | SHUTDOWN | 4 | |
| Input resistor | RI | 15 | kΩ | Gain ≤ 20 V/V (26 dB) | 4 | ||
| Common-mode input voltage | VIC | 0.5 | V | VDD = 2.5 V, 5.5 V, CMRR ≤ -49 dB; max = VDD, 0.8 V | 4 | ||
| Operating free-air temperature | TA | -40 | 85 | °C | Non T-suffix | 4 | |
| Junction-to-ambient thermal resistance | RθJA | 49.5 | °C/W | DRB (SON) | 4 | ||
| Junction-to-case (top) thermal resistance | RθJC(top) | 62.1 | °C/W | DRB (SON) | 4 | ||
| Junction-to-board thermal resistance | RθJB | 24.8 | °C/W | DRB (SON) | 4 | ||
| Junction-to-top characterization parameter | ψJT | 1.3 | °C/W | DRB (SON) | 4 | ||
| Junction-to-board characterization parameter | ψJB | 24.9 | °C/W | DRB (SON) | 4 | ||
| Junction-to-case (bottom) thermal resistance | RθJC(bot) | 6.9 | °C/W | DRB (SON) | 4 | ||
| Output offset voltage | /VOS/ | 25 | mV | VI = 0 V, AV = 2 V/V, VDD = 2.5 V to 5.5 V | 5 | ||
| Power-supply rejection ratio | PSRR | -75 | -55 | dB | VDD = 2.5 V to 5.5 V | 5 | |
| Common-mode rejection ratio | CMRR | -68 | -49 | dB | VDD = 2.5 V to 5.5 V, VIC = VDD/2 to 0.5 V, VIC = VDD/2 to VDD, 0.8 V, TA = 25°C | 5 | |
| Common-mode rejection ratio | CMRR | -35 | dB | TA = -40°C to 85°C | 5 | ||
| High-level input current | /IIH/ | 50 | μA | VDD = 5.5 V, VI = 5.8 V | 5 | ||
| Low-level input current | /IIL/ | 4 | μA | VDD = 5.5 V, VI = 0.3 V, TA = -40°C to 85°C | 5 | ||
| Quiescent current | I(Q) | 3.4 | 4.5 | mA | VDD = 5.5 V, no load | 5 | |
| Quiescent current | I(Q) | 2.8 | mA | VDD = 3.6 V, no load | 5 | ||
| Quiescent current | I(Q) | 2.2 | 3.2 | mA | VDD = 2.5 V, no load | 5 | |
| Shutdown current | I(SD) | 0.5 | 2 | μA | V(SHUTDOWN) = 0.8 V, VDD = 2.5 V to 5.5 V, TA = -40°C to 85°C | 5 | |
| Switching frequency | f(sw) | 200 | 250 | 300 | kHz | VDD = 2.5 V to 5.5 V | 5 |
| Static drain-source on-state resistance | rDS(on) | 770 | mΩ | VDD = 2.5 V | 5 | ||
| Static drain-source on-state resistance | rDS(on) | 590 | mΩ | VDD = 3.6 V | 5 | ||
| Static drain-source on-state resistance | rDS(on) | 500 | mΩ | VDD = 5.5 V | 5 | ||
| Input impedance | ZI | 142 | 150 | 158 | kΩ | 5 | |
| Output power | PO | 1.45 | W | THD+N = 10%, f = 1 kHz, RL = 8 Ω, VDD = 5 V | 5 | ||
| Supply ripple rejection ratio | kSVR | -71 | dB | f = 217 Hz, V(RIPPLE) = 200 mVpp, VDD = 3.6 V | 5 | ||
| Output voltage noise | Vn | 48 | μVRMS | VDD = 3.6 V, f = 20 Hz to 20 kHz, no weighting | 5 | ||
| Start-up time from shutdown | 9 | ms | VDD = 3.6 V | 5 |
CAD (KiCad official)
- Symbol:
TPA2005D1DRBQ1 - Footprint:
Package_SON:WSON-8-1EP_3x3mm_P0.5mm_EP1.6x2.0mm - 3D model: SON-8-EP(3x3) (KiCad packages3D, STEP)
- 3D model files:
tpa2005d1drbq1-etched.step/tpa2005d1drbq1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tpa2005d1drbq1.step/tpa2005d1drbq1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (38 pp, sha256
2f1ed5eedd67c341, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).