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VN0550N3-G-P013

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Microchip Tech MOSFETs, TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorvn0550n3-g-p013factory-2.0.0extractor-text

Verified VN0550N3-G-P013

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: VN0550N3-G-P013 · TO-92-3 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 14-page datasheet
  • ✓distributor: lcsc C629214, digikey 150-VN0550N3-G-P013CT-ND, mouser 689-VN0550N3-G-P013
  • ✓family: TO-92_Inline
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-1d7_fv4n/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ vn0550n3-g-p013.kicad_sym✓ vn0550n3-g-p013.kicad_mod✓ vn0550n3-g-p013.step
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3D Model

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Symbol & Footprint

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Contents

README

markdown

VN0550N3-G-P013

Microchip Tech · MOSFETs · TO-92-3

VN0550N3-G-P013 from Microchip Tech, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive Source terminal of the N-channel enhancement-mode vertical DMOS FET, with integral source-drain diode to the drain.
2 Gate input Gate terminal with high input impedance; threshold 2 V to 4 V at ID = 1 mA and absolute maximum gate-to-source voltage of ±20 V.
3 Drain passive Drain terminal with a drain-to-source breakdown voltage of at least 500 V (VGS = 0 V, ID = 1 mA).

Key specifications

Parameter Value
Manufacturer Microchip Tech
Package TO-92-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSS 500 V VGS = 0V, ID = 1 mA 2
Gate Threshold Voltage VGS(th) 2 4 V VGS = VDS, ID = 1 mA 2
Change in VGS(th) with Temperature ΔVGS(th) -3.8 -5 mV/°C VGS = VDS, ID = 1 mA (Note 1) 2
Gate Body Leakage Current IGSS 100 nA VGS = ±20V, VDS = 0V 2
Zero-Gate Voltage Drain Current IDSS 10 µA VGS = 0V, VDS = Maximum rating 2
Zero-Gate Voltage Drain Current (125°C) IDSS 1 mA VDS = 0.8 Maximum rating, VGS = 0V, TA = 125°C (Note 1) 2
On-State Drain Current ID(ON) 150 350 mA VGS = 10V, VDS = 25V 2
Static Drain-to-Source On-State Resistance RDS(ON) 40 60 Ω VGS = 10V, ID = 50 mA 2
Change in RDS(ON) with Temperature ΔRDS(ON) 1 1.7 %/°C VGS = 10V, ID = 50 mA (Note 1) 2
Forward Transconductance GFS 50 100 mmho VDS = 25V, ID = 50 mA 3
Input Capacitance CISS 45 55 pF VGS = 0V, VDS = 25V, f = 1 MHz 3
Common Source Output Capacitance COSS 8 10 pF VGS = 0V, VDS = 25V, f = 1 MHz 3
Reverse Transfer Capacitance CRSS 2 5 pF VGS = 0V, VDS = 25V, f = 1 MHz 3
Turn-On Delay Time td(ON) 10 ns VDD = 25V, ID = 150 mA, RGEN = 25Ω 3
Rise Time tr 15 ns VDD = 25V, ID = 150 mA, RGEN = 25Ω 3
Turn-Off Delay Time td(OFF) 10 ns VDD = 25V, ID = 150 mA, RGEN = 25Ω 3
Fall Time tf 10 ns VDD = 25V, ID = 150 mA, RGEN = 25Ω 3
Gate-to-Source Voltage VGS -20 20 V 2
Operating Ambient Temperature (abs max) TA -55 150 °C 2
Storage Temperature (abs max) TS -55 150 °C 2
Operating Ambient Temperature TA -55 150 °C 3
Storage Temperature TS -55 150 °C 3
On-State Drain Current ID(ON) 100 mA VGS = 5V, VDS = 25V 2
Static Drain-to-Source On-State Resistance RDS(ON) 45 Ω VGS = 5V, ID = 50 mA 2
Diode Forward Voltage Drop VSD 0.8 V VGS = 0V, ISD = 500 mA (Note 1) 3
Reverse Recovery Time trr 300 ns VGS = 0V, ISD = 500 mA 3
Package Thermal Resistance, 3-lead TO-92 θJA 132 °C/W 3
Continuous Drain Current, TO-92 ID 50 mA Continuous, limited by maximum rated TJ 3
Pulsed Drain Current, TO-92 ID 250 mA Pulsed 3
Power Dissipation, TO-92 PD 1 W TA = 25°C 3
Diode Continuous Current IDR 50 mA Limited by maximum rated TJ 3
Diode Pulsed Current IDRM 250 mA 3

CAD (KiCad official)

  • Symbol: VN0550N3-G-P013
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: vn0550n3-g-p013-etched.step / vn0550n3-g-p013-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vn0550n3-g-p013.step / vn0550n3-g-p013.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Microchip Tech datasheet (14 pp, sha256 8706518acc93be46, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF