component
RD3P200SNFRATL
Public Made by Adomby adom
ROHM Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRD3P200SNFRATL
ROHM Semicon · MOSFETs · TO-252
RD3P200SNFRATL from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal with ESD protection diode to source; VGSS rating is ±20 V and gate threshold is 1.0 to 2.5 V at VDS = 10 V, ID = 1 mA. |
| 2 | Drain | passive | Drain terminal (also the tab) with VDSS of 100 V and continuous drain current ID of ±20 A (pulsed ±80 A). |
| 3 | Source | passive | Source terminal connected to the body diode anode, with continuous body-diode forward current of 14 A at Ta = 25°C (pulsed 80 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | 100 | V | 1 | |||
| Continuous drain current | ID | -20 | 20 | A | Note *1: limited only by maximum temperature allowed | 1 | |
| Pulsed drain current | IDP | -80 | 80 | A | Note *2: Pw≦10μs, Duty cycle≦1% | 1 | |
| Gate - Source voltage | VGSS | -20 | 20 | V | 1 | ||
| Avalanche current, single pulse | IAS | 10 | A | Note *3: L≒1mH, VDD = 50V, RG = 25Ω, Starting Tj = 25℃ | 1 | ||
| Avalanche energy, single pulse | EAS | 72 | mJ | Note *3: L≒1mH, VDD = 50V, RG = 25Ω, Starting Tj = 25℃ | 1 | ||
| Power dissipation | PD | 20 | W | Note *4: Tc = 25℃ | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction - case | RthJC | 6.25 | ℃/W | Note *4: Tc = 25℃ | 2 | ||
| Drain - Source breakdown voltage | V(BR)DSS | 100 | V | VGS = 0V, ID = 1mA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 100V, VGS = 0V | 2 | ||
| Gate - Source leakage current | IGSS | -10 | 10 | μA | VGS = ±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 1 | 2.5 | V | VDS = 10V, ID = 1mA | 2 | |
| Static drain - source on - state resistance (VGS = 10V) | RDS(on) | 46 | mΩ | VGS = 10V, ID = 20A; *5 Pulsed | 2 | ||
| Static drain - source on - state resistance (VGS = 4.0V) | RDS(on) | 50 | mΩ | VGS = 4.0V, ID = 20A; *5 Pulsed | 2 | ||
| Forward transfer admittance | /Yfs/ | 15 | S | VDS = 10V, ID = 20A; *5 Pulsed | 2 | ||
| Continuous forward current | IS | 14 | A | Note *1: Ta = 25℃ | 3 | ||
| Pulse forward current | ISP | 80 | A | Note *2: Pw≦10μs, Duty cycle≦1% | 3 | ||
| Forward voltage | VSD | 1.5 | V | VGS = 0V, IS = 20A; *5 Pulsed | 3 |
CAD (KiCad official)
- Symbol:
RD3P200SNFRATL - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
rd3p200snfratl-etched.step/rd3p200snfratl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rd3p200snfratl.step/rd3p200snfratl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (14 pp, sha256
25b0906061a8f8ee, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).