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Contents

README

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FQB33N10LTM

onsemi · MOSFETs · D2PAK

FQB33N10LTM from onsemi, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated gate control terminal for the N-channel enhancement-mode MOSFET. VGS(th) = 1.0-2.0 V; absolute max VGSS = ±20 V. Total gate charge Qg ≈ 30 nC typ (40 nC max) at VGS = 5 V, VDS = 80 V, ID = 33 A.
2 D passive Drain. Power switch drain terminal, internally connected to the metal tab (pin 4). VDSS = 100 V; continuous ID = 33 A @ TC = 25 °C (23 A @ TC = 100 °C); pulsed IDM = 132 A. Static RDS(on) = 52 mΩ max @ VGS = 10 V.
3 S passive Source. Common return for the MOSFET channel and anode of the integrated body diode. Body-diode VSD ≤ 1.5 V @ IS = 33 A, VGS = 0; IS(max) = 33 A continuous, ISM = 132 A pulsed; trr ≈ 90 ns typ.
4 D (TAB) passive Drain / thermal tab. Exposed metal backside of the D2PAK, electrically identical to pin 2 (Drain) and the primary heat-dissipation path. RθJC = 1.18 °C/W max; solder to a copper pad (≥1 in² of 2 oz copper ≈ RθJA = 40 °C/W) for full 127 W dissipation.

Key specifications

Parameter Value
Manufacturer onsemi
Package D2PAK
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • FQB33N10LTM

CAD (KiCad official)

  • Symbol: FQB33N10LTM
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 12557c1b513bfde1, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF