component
FDS8858CZ
Public Made by Adomby adom
onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownFDS8858CZ
onsemi · MOSFETs · SO-8
FDS8858CZ from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the Q1 N-channel MOSFET; Q1 is rated VDS 30 V, VGS ±20 V, and 8.6 A continuous drain current at TA = 25°C. |
| 2 | G1 | input | Gate terminal of the Q1 N-channel MOSFET; the datasheet specifies VGS of ±20 V maximum for Q1. |
| 3 | S2 | passive | Source terminal of the Q2 P-channel MOSFET; Q2 is rated VDS -30 V, VGS ±25 V, and -7.3 A continuous drain current at TA = 25°C. |
| 4 | G2 | input | Gate terminal of the Q2 P-channel MOSFET; the datasheet specifies VGS of ±25 V maximum for Q2. |
| 5 | D2 | passive | Drain terminal of the Q2 P-channel MOSFET; Q2 drain is rated -30 V to source. |
| 6 | D2 | passive | Drain terminal of the Q2 P-channel MOSFET (second drain pin, internally common with pin 5); Q2 drain is rated -30 V to source. |
| 7 | D1 | passive | Drain terminal of the Q1 N-channel MOSFET; Q1 drain is rated 30 V to source. |
| 8 | D1 | passive | Drain terminal of the Q1 N-channel MOSFET (second drain pin, internally common with pin 7); Q1 drain is rated 30 V to source. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VDS Drain to Source Voltage (Q1 N-Channel) | VDS | 30 | V | 2 | |||
| VDS Drain to Source Voltage (Q2 P-Channel) | VDS | -30 | V | 2 | |||
| VGS Gate to Source Voltage (Q1 N-Channel) | VGS | -20 | 20 | V | 2 | ||
| VGS Gate to Source Voltage (Q2 P-Channel) | VGS | -25 | 25 | V | 2 | ||
| Drain Current Continuous (Q1 N-Channel) | ID | 8.6 | A | TA = 25°C | 2 | ||
| Drain Current Continuous (Q2 P-Channel) | ID | -7.3 | A | TA = 25°C | 2 | ||
| Drain Current Pulsed (Q1 N-Channel) | ID | 20 | A | Pulsed | 2 | ||
| Drain Current Pulsed (Q2 P-Channel) | ID | -20 | A | Pulsed | 2 | ||
| Single Pulse Avalanche Energy (Q1 N-Channel) | EAS | 50 | mJ | Note 3 | 2 | ||
| Single Pulse Avalanche Energy (Q2 P-Channel) | EAS | 11 | mJ | Note 3 | 2 | ||
| Power Dissipation for Dual Operation | PD | 2 | W | 2 | |||
| Power Dissipation for Single Operation | PD | 1.6 | W | TA = 25°C (Note 1a) | 2 | ||
| Power Dissipation for Single Operation | PD | 0.9 | W | TA = 25°C (Note 1c) | 2 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Drain to Source Breakdown Voltage (Q1 N-Channel) | BVDSS | 30 | V | ID = 250 μA, VGS = 0V | 3 | ||
| Drain to Source Breakdown Voltage (Q2 P-Channel) | BVDSS | -30 | V | ID = -250 μA, VGS = 0V | 3 | ||
| Zero Gate Voltage Drain Current (Q1 N-Channel) | IDSS | 1 | μA | VDS = 24V, VGS = 0V | 3 | ||
| Zero Gate Voltage Drain Current (Q2 P-Channel) | IDSS | -1 | μA | VDS = -24V, VGS = 0V | 3 | ||
| Gate to Source Leakage Current (Q1 N-Channel) | IGSS | -10 | 10 | μA | VGS = ±20V, VDS = 0V | 3 | |
| Gate to Source Leakage Current (Q2 P-Channel) | IGSS | -10 | 10 | μA | VGS = ±25V, VDS = 0V | 3 | |
| Gate to Source Threshold Voltage (Q1 N-Channel) | VGS(th) | 1 | 1.6 | 3 | V | VGS = VDS, ID = 250 μA | 3 |
| Gate to Source Threshold Voltage (Q2 P-Channel) | VGS(th) | -1 | -2.1 | -3 | V | VGS = VDS, ID = -250 μA | 3 |
| Static Drain to Source On Resistance (Q1 N-Channel) | rDS(on) | 12.4 | 17 | mΩ | VGS = 10V, ID = 8.6A | 3 | |
| Static Drain to Source On Resistance (Q1 N-Channel) | rDS(on) | 15.2 | 20 | mΩ | VGS = 4.5V, ID = 7.3A | 3 | |
| Static Drain to Source On Resistance (Q1 N-Channel, hot) | rDS(on) | 17.7 | 24.3 | mΩ | VGS = 10V, ID = 8.6A, TJ = 125°C | 3 | |
| Static Drain to Source On Resistance (Q2 P-Channel) | rDS(on) | 17.1 | 20.5 | mΩ | VGS = -10V, ID = -7.3A | 3 | |
| Static Drain to Source On Resistance (Q2 P-Channel) | rDS(on) | 26.5 | 34.5 | mΩ | VGS = -4.5V, ID = -5.6A | 3 | |
| Static Drain to Source On Resistance (Q2 P-Channel, hot) | rDS(on) | 24 | 28.8 | mΩ | VGS = -10V, ID = -7.3A, TJ = 125°C | 3 | |
| Input Capacitance (Q1 N-Channel) | Ciss | 905 | 1205 | pF | VDS = 15V, VGS = 0V, f = 1MHZ | 3 | |
| Input Capacitance (Q2 P-Channel) | Ciss | 1675 | 2230 | pF | VDS = -15V, VGS = 0V, f = 1MHZ | 3 | |
| Output Capacitance (Q1 N-Channel) | Coss | 180 | 240 | pF | 3 | ||
| Output Capacitance (Q2 P-Channel) | Coss | 290 | 390 | pF | 3 | ||
| Rise Time (Q1 N-Channel) | tr | 3 | 10 | ns | 3 | ||
| Rise Time (Q2 P-Channel) | tr | 10 | 20 | ns | 3 | ||
| Turn-Off Delay Time (Q1 N-Channel) | td(off) | 19 | 35 | ns | 3 | ||
| Turn-Off Delay Time (Q2 P-Channel) | td(off) | 33 | 53 | ns | 3 | ||
| Fall Time (Q1 N-Channel) | tf | 3 | 10 | ns | 3 | ||
| Fall Time (Q2 P-Channel) | tf | 16 | 29 | ns | 3 | ||
| Total Gate Charge (Q1 N-Channel) | Qg(TOT) | 17 | 24 | nC | VGS = 10V, VDD = 15V, ID = 8.6A | 3 | |
| Total Gate Charge (Q2 P-Channel) | Qg(TOT) | 33 | 46 | nC | VGS = -10V, VDD = -15V, ID = -7.3A | 3 | |
| Source to Drain Diode Forward Voltage (Q1 N-Channel) | VSD | 0.8 | 1.2 | V | VGS = 0V, IS = 8.6A (Note 2) | 4 | |
| Source to Drain Diode Forward Voltage (Q2 P-Channel) | VSD | 0.9 | -1.2 | V | VGS = 0V, IS = -7.3A (Note 2) | 4 | |
| Reverse Recovery Time (Q1 N-Channel) | trr | 25 | 38 | ns | IF = 8.6A, di/dt = 100A/μs | 4 | |
| Reverse Recovery Time (Q2 P-Channel) | trr | 28 | 42 | ns | IF = -7.3A, di/dt = 100A/μs | 4 | |
| Reverse Recovery Charge (Q1 N-Channel) | Qrr | 19 | 29 | nC | 4 | ||
| Reverse Recovery Charge (Q2 P-Channel) | Qrr | 22 | 33 | nC | 4 | ||
| Thermal Resistance, Junction to Case | RθJC | 40 | °C/W | Note 1 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 78 | °C/W | Note 1a: 0.5 in² pad of 2 oz copper | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 125 | °C/W | Note 1b: 0.02 in² pad of 2 oz copper | 4 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 135 | °C/W | Note 1c: minimum pad | 4 |
CAD (KiCad official)
- Symbol:
FDS8858CZ - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
fds8858cz-etched.step/fds8858cz-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fds8858cz.step/fds8858cz.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (11 pp, sha256
914e27009925692c, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).