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Contents

README

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CMSA150N04B

Cmos(广东场效应半导体) · IC · DFN-8(5x6)

CMSA150N04B from Cmos(广东场效应半导体), in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; the datasheet gives no separate limit for this pin, and the device is rated 40 V VDS with ±20 V VGS.
2 S passive Source terminal of the N-channel MOSFET; the datasheet gives no separate limit for this pin, and the device is rated 40 V VDS with ±20 V VGS.
3 S passive Source terminal of the N-channel MOSFET; the datasheet gives no separate limit for this pin, and the device is rated 40 V VDS with ±20 V VGS.
4 G input Gate terminal; the gate-source voltage is rated ±20 V (VGS) and the threshold is 1 V to 3 V at VGS=VDS, ID=250µA.
5 D passive Drain terminal of the N-channel MOSFET; the drain-source voltage is rated 40 V (VDS).
6 D passive Drain terminal of the N-channel MOSFET; the drain-source voltage is rated 40 V (VDS).
7 D passive Drain terminal of the N-channel MOSFET; the drain-source voltage is rated 40 V (VDS).
8 D passive Drain terminal of the N-channel MOSFET; the drain-source voltage is rated 40 V (VDS).
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Cmos(广东场效应半导体)
Package DFN-8(5x6)
Category
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Total Power Dissipation PD 75 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Continuous Drain Current ID 110 A TC=25℃ 1
Continuous Drain Current ID 90 A TC=100℃ 1
Pulsed Drain Current IDM 330 A 1
Single Pulse Avalanche Energy EAS 480 mJ 1
Thermal Resistance, Junction-to-Ambient RθJA 50 ℃/W 1
Thermal Resistance Junction-Case RθJC 1.67 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 2.8 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 4.8 mΩ VGS=4.5V, ID=20A 2
Gate Threshold Voltage VGS(th) 1 3 V VGS=VDS, ID=250μA 2
Drain-Source Leakage Current IDSS 1 uA VDS=32V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Diode continuous forward current IS 110 A 2
Diode pulse current IS,pulse 330 A 2
Diode Forward Voltage VSD 1 V VGS=0V, IF=20A, Tj=25℃ 2

CAD (KiCad official)

  • Symbol: CMSA150N04B
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: cmsa150n04b-etched.step / cmsa150n04b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmsa150n04b.step / cmsa150n04b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos(广东场效应半导体) datasheet (2 pp, sha256 29572c64bfeea334, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF