component
ME4502-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownME4502-VB
VBsemi Elec · MOSFETs · SO-8
ME4502-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, 30 V, RDS(on) 0.011 ohm at VGS = 10 V). |
| 2 | G1 | input | Gate of MOSFET 1 (N-channel), VGS max ±20 V. |
| 3 | S2 | passive | Source of MOSFET 2 (P-channel, -30 V, RDS(on) 0.021 ohm at VGS = -10 V). |
| 4 | G2 | input | Gate of MOSFET 2 (P-channel), VGS max ±20 V. |
| 5 | D2 | passive | Drain of MOSFET 2 (P-channel), pulsed drain current IDM -60 A; shorted with pin 6. |
| 6 | D2 | passive | Drain of MOSFET 2 (P-channel), pulsed drain current IDM -60 A; shorted with pin 5. |
| 7 | D1 | passive | Drain of MOSFET 1 (N-channel), pulsed drain current IDM 60 A; shorted with pin 8. |
| 8 | D1 | passive | Drain of MOSFET 1 (N-channel), pulsed drain current IDM 60 A; shorted with pin 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage N-ch | VDS | 30 | V | TA = 25 °C | 1 | ||
| Drain-Source Voltage P-ch | VDS | -30 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage N-ch | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Gate-Source Voltage P-ch | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Pulsed Drain Current N-ch | IDM | 60 | A | 10 µs pulse width | 1 | ||
| Pulsed Drain Current P-ch | IDM | -60 | A | 10 µs pulse width | 1 | ||
| Source-Drain Diode Current N-ch | IS | 3.6 | A | TC = 25 °C | 1 | ||
| Source-Drain Diode Current P-ch | IS | -3.6 | A | TC = 25 °C | 1 | ||
| Pulsed Source-Drain Current N-ch | ISM | 60 | A | 1 | |||
| Pulsed Source-Drain Current P-ch | ISM | -60 | A | 1 | |||
| Single Pulse Avalanche Current N-ch | IAS | 20 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Current P-ch | IAS | -20 | A | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 3 | W | TA = 25 °C, both channels | 1 | ||
| Maximum Power Dissipation | PD | 2.28 | W | TA = 70 °C, both channels | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance N-ch | RthJA | 20 | 32.5 | °C/W | t ≤ 10 s | 1 | |
| Junction-to-Ambient Thermal Resistance P-ch | RthJA | 27 | 32.5 | °C/W | t ≤ 10 s | 1 | |
| Junction-to-Foot Thermal Resistance N-ch | RthJF | 10 | 20 | °C/W | Steady State | 1 | |
| Junction-to-Foot Thermal Resistance P-ch | RthJF | 19 | 28 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage N-ch | VDS | 30 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Drain-Source Breakdown Voltage P-ch | VDS | -30 | V | VGS = 0 V, ID = - 250 µA | 2 | ||
| Gate Threshold Voltage N-ch | VGS(th) | 1 | 2.2 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate Threshold Voltage P-ch | VGS(th) | -0.9 | -2.5 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Body Leakage N-ch | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Gate-Body Leakage P-ch | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current N-ch | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current P-ch | IDSS | -1 | µA | VDS = - 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current N-ch | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| Zero Gate Voltage Drain Current P-ch | IDSS | -10 | µA | VDS = - 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current N-ch | ID(on) | 40 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| On-State Drain Current P-ch | ID(on) | -40 | A | VDS = - 5 V, VGS = - 10 V | 2 | ||
| Gate Resistance N-ch | Rg | 0.3 | 1.3 | 2.6 | Ω | f = 1 MHz | 2 |
| Gate Resistance P-ch | Rg | 1.3 | 6.4 | 12.8 | Ω | f = 1 MHz | 2 |
| Total Gate Charge N-ch | Qg | 13.3 | 20 | nC | VDS = 20 V, VGS = 10 V, ID = 10 A | 2 | |
| Total Gate Charge P-ch | Qg | 13 | 20 | nC | VDS = - 20 V, VGS = - 10 V, ID = - 10 A | 2 | |
| Total Gate Charge N-ch | Qg | 6.5 | 10 | nC | VDS = 20 V, VGS = 4.5 V, ID = 10 A | 2 | |
| Total Gate Charge P-ch | Qg | 21.7 | 33 | nC | VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A | 2 | |
| Turn-On Delay Time P-ch | td(on) | 10 | 20 | ns | VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 3 | |
| Rise Time P-ch | tr | 9 | 18 | ns | VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 3 | |
| Turn-Off Delay Time P-ch | td(off) | 50 | 90 | ns | VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 3 | |
| Fall Time P-ch | tf | 13 | 26 | ns | VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 3 | |
| Turn-On Delay Time N-ch | td(on) | 11 | 22 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 4.5 V, Rg = 1 Ω | 3 | |
| Rise Time N-ch | tr | 12 | 22 | ns | VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 4.5 V, Rg = 1 Ω | 3 | |
| Turn-On Delay Time P-ch | td(on) | 42 | 75 | ns | VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω | 3 | |
| Rise Time P-ch | tr | 40 | 70 | ns | VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω | 3 | |
| Turn-Off Delay Time P-ch | td(off) | 40 | 70 | ns | VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω | 3 | |
| Fall Time P-ch | tf | 18 | 35 | ns | VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω | 3 | |
| Body Diode Voltage N-ch | VSD | 0.81 | 1.2 | V | IS = 5.4 A | 3 | |
| Body Diode Voltage P-ch | VSD | -1.2 | -0.77 | V | IS = - 2 A | 3 | |
| Body Diode Reverse Recovery Time P-ch | trr | 41 | 80 | ns | IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C | 3 | |
| Body Diode Reverse Recovery Charge P-ch | Qrr | 32 | 65 | nC | IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C | 3 | |
| Drain-Source On-State Resistance N-ch | RDS(on) | 0.011 | Ω | VGS = 10 V, ID = 6.8 A | 2 | ||
| Drain-Source On-State Resistance P-ch | RDS(on) | 0.021 | Ω | VGS = - 10 V, ID = - 8 A | 2 | ||
| Drain-Source On-State Resistance N-ch | RDS(on) | 0.013 | Ω | VGS = 4.5 V, ID = 6.6 A | 2 | ||
| Drain-Source On-State Resistance P-ch | RDS(on) | 0.028 | Ω | VGS = - 4.5 V, ID = - 5 A | 2 | ||
| Forward Transconductance N-ch | gfs | 37 | S | VDS = 15 V, ID = 6.8 A | 2 | ||
| Forward Transconductance P-ch | gfs | 35 | S | VDS = - 15 V, ID = - 6.7 A | 2 |
CAD (KiCad official)
- Symbol:
ME4502-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
me4502-vb-etched.step/me4502-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);me4502-vb.step/me4502-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (14 pp, sha256
0ed4f1b4bcfd2761, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).