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Contents

README

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RS85N140S

REASUNOS · MOSFETs · TO-263

RS85N140S from REASUNOS, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage is rated at ±20 V maximum.
2 D passive Drain, brought out as the exposed tab (middle lead absent); drain-to-source voltage is rated 85 V and continuous drain current 140 A at TC=25℃.
3 S passive Source; continuous source current through the integral body diode is 140 A maximum.

Key specifications

Parameter Value
Manufacturer REASUNOS
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 85 V Tc=25℃ 1
Continuous Drain Current ID 140 A TC=25℃ 1
Continuous Drain Current ID 125 A TC=100℃ 1
Pulsed Drain Current IDM 490 A 1
Power Dissipation PD 175 W Tc=25℃ 1
Gate-to-Source Voltage VGS -20 20 V 1
Single Pulse Avalanche Energy EAS 150 mJ L = 0.5mH,VDD = 50V, RG = 25Ω, Tj = 25℃ 1
Maximum Soldering Temperature, Leads TL 300 ℃ Leads at 0.063in(1.6mm) from Case for 10 seconds 1
Maximum Soldering Temperature, Package TPKG 260 ℃ Package Body for 10 seconds 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Junction-to-Case Thermal Resistance RθJC 0.7 ℃/W Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ 2
Junction-to-Ambient Thermal Resistance RθJA 62 ℃/W 1 cubic foot chamber, free air 2
Drain-to-Source Breakdown Voltage BVDSS 85 V VGS=0V,ID=250µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS=80V,VGS=0V 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V,VDS=0V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V,VDS=0V 2
Static Drain-to-Source On-Resistance RDS(on) 4.5 5.3 mΩ VGS=10V,ID=50A 2
Gate Threshold Voltage VGS(TH) 2.1 4.1 V VGS=VDS,ID=250µA 2
Continuous Source Current IS 140 A Integral pn-diode in MOSFET 3
Maximum Pulsed Current ISM 490 A Integral pn-diode in MOSFET 3
Diode Forward Voltage VSD 1.4 V IS=50A,VGS=0V 3
Turn-on Delay Time td(ON) 20 nS VDS=40V, RG=3Ω, VGS=10V 2
Rise Time trise 38.7 nS VDS=40V, RG=3Ω, VGS=10V 2
Turn-OFF Delay Time td(OFF) 46 nS VDS=40V, RG=3Ω, VGS=10V 2
Fall Time tfall 23 nS VDS=40V, RG=3Ω, VGS=10V 2
Input Capacitance Ciss 3090 pF VGS=0V, VDS=40V, f=1MHz 3
Output Capacitance Coss 30 pF VGS=0V, VDS=40V, f=1MHz 3
Reverse Transfer Capacitance Crss 55 pF VGS=0V, VDS=40V, f=1MHz 3
Total Gate Charge Qg 55 nC VDS=50V, ID=40A, VGS=10V 3
Gate-to-Source Charge Qgs 15 nC VDS=50V, ID=40A, VGS=10V 3
Gate-to-Drain (Miller) Charge Qgd 12 nC VDS=50V, ID=40A, VGS=10V 3
Reverse Recovery Time trr 60 nS VGS=0V, IS=20A, di/dt=100A/µs 3
Reverse Recovery Charge Qrr 565 nC VGS=0V, IS=20A, di/dt=100A/µs 3

CAD (KiCad official)

  • Symbol: RS85N140S
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: rs85n140s-etched.step / rs85n140s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs85n140s.step / rs85n140s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: REASUNOS datasheet (9 pp, sha256 1d1b869f46e36a17, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF