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PMSS3904

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-323-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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PMSS3904

Nexperia · Bipolar (BJT) · SOT-323-3

PMSS3904 from Nexperia, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 base input Base terminal of the PMSS3904 NPN switching transistor, which drives the device between its switching states.
2 emitter passive Emitter terminal of the PMSS3904 NPN switching transistor, rated for a maximum collector current of 100 mA and a maximum collector-emitter voltage of 40 V.
3 collector passive Collector terminal of the PMSS3904 NPN switching transistor, rated for a maximum collector-base voltage of 60 V and a maximum DC collector current of 100 mA.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-323-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage (open emitter) VCBO 60 V open emitter 3
collector-emitter voltage (open base) VCEO 40 V open base 3
emitter-base voltage (open collector) VEBO 6 V open collector 3
collector current (DC) IC 100 mA 3
peak collector current ICM 200 mA 3
peak base current IBM 200 mA 3
total power dissipation Ptot 200 mW Tamb ≤ 25 °C; note 1 3
storage temperature Tstg -65 150 °C 3
junction temperature Tj 150 °C 3
operating ambient temperature Tamb -65 150 °C 3
collector cut-off current ICBO 50 nA IE = 0; VCB = 30 V 4
collector cut-off current ICBO 10 μA IE = 0; VCB = 30 V; Tj = 150 °C 4
emitter cut-off current IEBO 50 nA IC = 0; VEB = 5 V 4
DC current gain hFE 40 VCE = 1 V; IC = 0.1 mA; see Fig.2 4
DC current gain hFE 70 VCE = 1 V; IC = 1 mA; see Fig.2 4
DC current gain hFE 100 300 VCE = 1 V; IC = 10 mA; see Fig.2 4
DC current gain hFE 60 VCE = 1 V; IC = 50 mA; note 1; see Fig.2 4
DC current gain hFE 30 VCE = 1 V; IC = 100 mA; note 1; see Fig.2 4
collector-emitter saturation voltage VCEsat 200 mV IC = 10 mA; IB = 1 mA 4
collector-emitter saturation voltage VCEsat 300 mV IC = 50 mA; IB = 5 mA; note 1 4
base-emitter saturation voltage VBEsat 650 850 mV IC = 10 mA; IB = 1 mA 4
base-emitter saturation voltage VBEsat 950 mV IC = 50 mA; IB = 5 mA; note 1 4
collector capacitance Cc 4 pF IE = ie = 0; VCB = 5 V; f = 1 MHz 4
emitter capacitance Ce 12 pF IC = ic = 0; VEB = 0.5 V; f = 1 MHz 4
transition frequency fT 180 MHz IC = 10 mA; VCE = 20 V; f = 100 MHz 4
noise figure F 5 dB IC = 100 μA; VCE = 5 V; RS = 1 kΩ; f = 10 Hz to 15.7 KHz 4
turn-on time ton 110 ns ICon = 10 mA; IBon = 1 mA; IBoff = −1 mA; VCC = 3 V; VBB = −1.9 V 4
delay time td 50 ns 4
rise time tr 60 ns 4
turn-off time toff 1200 ns 4
storage time ts 1000 ns 4
fall time tf 200 ns 4
thermal resistance from junction to ambient Rth j-a 625 K/W note 1 (transistor mounted on FR4 printed-circuit board) 4

CAD (KiCad official)

  • Symbol: PMSS3904
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323-3 (KiCad packages3D, STEP)
  • 3D model files: pmss3904-etched.step / pmss3904-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmss3904.step / pmss3904.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (8 pp, sha256 7f75c598110efcc8, retrieved 2026-10-16, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF