component
CPH6615-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownCPH6615-VB
VBsemi Elec · MOSFETs · TSOP-6
CPH6615-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET (Q1), with VGS rated ±20 V. |
| 2 | S2 | passive | Source of the P-channel MOSFET (Q2), with VDS rated -20 V and continuous drain current of -3.4 A at TA = 25 °C. |
| 3 | G2 | input | Gate of the P-channel MOSFET (Q2), with VGS rated ±20 V. |
| 4 | D2 | passive | Drain of the P-channel MOSFET (Q2), with VDS rated -20 V and pulsed drain current of 10 A. |
| 5 | S1 | passive | Source of the N-channel MOSFET (Q1), with VDS rated 20 V and continuous source current of 1.05 A. |
| 6 | D1 | passive | Drain of the N-channel MOSFET (Q1), with VDS rated 20 V and continuous drain current of 5.5 A at TA = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Ch) | VDS | 20 | V | N-Channel, TA=25 °C | 1 | ||
| Drain-Source Voltage (P-Ch) | VDS | -20 | V | P-Channel, TA=25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | N- and P-Channel, TA=25 °C | 1 | |
| Continuous Source Current N-Ch | IS | 1.05 | A | N-Channel, diode conduction, TA=25 °C | 1 | ||
| Continuous Source Current P-Ch | IS | -1.05 | A | P-Channel, diode conduction, TA=25 °C | 1 | ||
| Operating Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance (t≤5 s) | RthJA | 93 | 110 | °C/W | t ≤ 5 s | 1 | |
| Junction-to-Ambient Thermal Resistance (steady state) | RthJA | 130 | 150 | °C/W | Steady State | 1 | |
| Junction-to-Lead Thermal Resistance | RthJL | 75 | 90 | °C/W | Steady State | 1 | |
| Gate Threshold Voltage N-Ch | VGS(th) | 0.5 | 1.5 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate Threshold Voltage P-Ch | VGS(th) | -0.5 | -1.5 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Body Leakage N-Ch | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 | |
| Gate-Body Leakage P-Ch | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 | |
| Zero Gate Voltage Drain Current N-Ch | IDSS | 1 | µA | VDS = 16 V, VGS = 0 | 2 | ||
| Zero Gate Voltage Drain Current P-Ch | IDSS | -1 | µA | VDS = - 16 V, VGS = 0 | 2 | ||
| Zero Gate Voltage Drain Current N-Ch, TJ=55 °C | IDSS | 5 | µA | VDS = 16 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| Zero Gate Voltage Drain Current P-Ch, TJ=55 °C | IDSS | -5 | µA | VDS = - 16 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current N-Ch | ID(on) | 3.7 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| Diode Forward Voltage N-Ch | VSD | 0.81 | 1.1 | V | IS = 1.05 A, VGS = 0 V | 2 | |
| Diode Forward Voltage P-Ch | VSD | -0.83 | -1.1 | V | IS = - 1.05 A, VGS = 0 V | 2 | |
| Total Gate Charge N-Ch | Qg | 2.1 | 3.2 | nC | VDS = 15 V, VGS = 5 V, ID = 1.8 A | 2 | |
| Total Gate Charge P-Ch | Qg | 2.4 | 3.6 | nC | VDS = - 15 V, VGS = - 5 V, ID = - 1.8 A | 2 | |
| Turn-On Delay Time N-Ch | td(on) | 7 | 11 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Turn-On Delay Time P-Ch | td(on) | 8 | 12 | ns | VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω | 2 | |
| Rise Time N-Ch | tr | 9 | 14 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Rise Time P-Ch | tr | 12 | 18 | ns | VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω | 2 | |
| Turn-Off Delay Time N-Ch | td(off) | 13 | 20 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Turn-Off Delay Time P-Ch | td(off) | 12 | 18 | ns | VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω | 2 | |
| Fall Time N-Ch | tf | 5 | 8 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Fall Time P-Ch | tf | 7 | 11 | ns | VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω | 2 | |
| Source-Drain Reverse Recovery Time N-Ch | trr | 35 | 60 | ns | IF = 1.05 A, dI/dt = 100 A/µs | 2 | |
| Source-Drain Reverse Recovery Time P-Ch | trr | 30 | 60 | ns | IF = - 1.05 A, dI/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
CPH6615-VB - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
cph6615-vb-etched.step/cph6615-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cph6615-vb.step/cph6615-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (10 pp, sha256
532964fb6e3349f8, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).