STB13N60M2 from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate terminal of the N-channel MOSFET; the datasheet gives a gate-source voltage limit of ±25 V.
2	D	passive	Drain terminal; the datasheet gives a continuous drain current of 11 A at TC = 25 °C and a drain-source voltage of 600 V.
3	S	passive	Source terminal; the datasheet gives a source-drain diode current of 11 A and a pulsed current of 44 A.

Key specifications

Parameter	Value
Manufacturer	STMicroelectronics
Package	D2PAK
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Gate-source voltage	VGS	-25		25	V		2
Gate body leakage current	IGSS	-10		10	µA	VDS = 0 V, VGS = ±25 V	3
Gate threshold voltage	VGS(th)	2	3	4	V	VDS = VGS, ID = 250 µA	3
Static drain-source on-resistance	RDS(on)		350	380	mΩ	VGS = 10 V, ID = 5.5 A	3
Drain-source breakdown voltage	V(BR)DSS	600			V	VGS= 0 V, ID = 1 mA	3
Zero gate voltage drain current	IDSS			1	µA	VGS = 0 V, VDS = 600 V	3
Zero gate voltage drain current	IDSS			100	µA	VGS = 0 V, VDS = 600 V, TC = 125 °C	3
Drain current (continuous) at TC = 25 °C	ID			11	A	TC = 25 °C	2
Drain current (continuous) at TC = 100 °C	ID			7	A	TC = 100 °C	2
Drain current (pulsed)	IDM			44	A		2
Total power dissipation at TC = 25 °C	PTOT			110	W	TC = 25 °C	2
Peak diode recovery voltage slope	dv/dt(2)			15	V/ns	ISD ≤ 11 A, di/dt ≤ 400 A/μs, VDD = 400 V	2
MOSFET dv/dt ruggedness	dv/dt(3)			50	V/ns	VDS ≤ 480 V	2
Storage temperature range	Tstg	-55		150	°C		2
Thermal resistance, junction-to-case	RthJC			1.14	°C/W		2
Thermal resistance, junction-to-ambient	RthJA			30	°C/W	Mounted on a standard 1 inch² area of FR-4 PCB with 2-oz copper	2
Avalanche current, repetitive or non-repetitive	IAR			2.8	A	Pulse width limited by TJ max.	2
Single pulse avalanche energy	EAS			125	mJ	Starting TJ = 25 °C, ID = IAR, VDD = 50 V	2
Input capacitance	Ciss		580		pF	VDS= 100 V, f = 1 MHz, VGS = 0 V	3
Output capacitance	Coss		32		pF		3
Reverse transfer capacitance	Crss		1.1		pF		3
Equivalent output capacitance	Coss eq.		120		pF	VDS = 0 to 480 V, VGS = 0 V	3
Intrinsic gate resistance	RG		6.6		Ω	f = 1 MHz, ID = 0 A	3
Total gate charge	Qg		17		nC	VDD = 480 V, ID = 11 A, VGS = 0 to 10 V	3
Gate-source charge	Qgs		2.5		nC		3
Gate-drain charge	Qgd		9		nC		3
Turn-on delay time	td(on)		11		ns	VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V	3
Rise time	tr		10		ns	VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V	3
Turn-off-delay time	td(off)		41		ns	VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V	3
Fall time	tf		9.5		ns	VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V	3
Source-drain current	ISD			11	A		4
Source-drain current (pulsed)	ISDM			44	A		4
Forward on voltage	VSD			1.6	V	VGS = 0 V, ISD = 11 A	4
Reverse recovery time	trr			297	ns	ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V	4
Reverse recovery charge	Qrr			2.8	µC	ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V	4
Reverse recovery current	IRRM			18.5	A	ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V	4
Reverse recovery time	trr			394	ns	ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C	4
Reverse recovery charge	Qrr			3.8	µC	ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C	4
Reverse recovery current	IRRM			19	A	ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C	4

CAD (KiCad official)

Symbol: STB13N60M2
Footprint: Package_TO_SOT_SMD:TO-263-2
3D model: D2PAK (KiCad packages3D, STEP)
3D model files: stb13n60m2-etched.step / stb13n60m2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stb13n60m2.step / stb13n60m2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: STMicroelectronics datasheet (13 pp, sha256 e2afb70283e92647, retrieved 2026-11-06, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

STB13N60M2

Verified STB13N60M2

Verification log 1 record

3D Model

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Schematic Symbol

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Datasheet

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