component
AO4406-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO4406-MS
MSKSEMI · MOSFETs · SOP-8
AO4406-MS from MSKSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied internally with the other source pins; body diode anode side. |
| 2 | S | passive | Source of the N-channel MOSFET, tied internally with the other source pins; body diode anode side. |
| 3 | S | passive | Source of the N-channel MOSFET, tied internally with the other source pins; body diode anode side. |
| 4 | G | input | Gate of the N-channel MOSFET, rated for VGS ±20V with threshold 1.5 to 2.5V at ID=250uA. |
| 5 | D | passive | Drain of the N-channel MOSFET, rated for VDS 30V and ID 12A continuous at TA=25C. |
| 6 | D | passive | Drain of the N-channel MOSFET, rated for VDS 30V and ID 12A continuous at TA=25C. |
| 7 | D | passive | Drain of the N-channel MOSFET, rated for VDS 30V and ID 12A continuous at TA=25C. |
| 8 | D | passive | Drain of the N-channel MOSFET, rated for VDS 30V and ID 12A continuous at TA=25C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 12 | A | TA=25℃ | 2 | ||
| Continuous Drain Current | ID | 10 | A | TA=70℃ | 2 | ||
| Pulsed Drain Current | IDM | 100 | A | 2 | |||
| Avalanche Current | IAS | 22 | A | 2 | |||
| Avalanche Energy | EAS | 24 | mJ | L=0.1mH | 2 | ||
| Power Dissipation | PD | 3.1 | W | TA=25℃ | 2 | ||
| Power Dissipation | PD | 2 | W | TA=70℃ | 2 | ||
| Thermal Resistance Junction-to-Ambient | RthJA | 40 | ℃/W | t ≤ 10s | 2 | ||
| Thermal Resistance Junction-to-Ambient | RthJA | 75 | ℃/W | Steady-State | 2 | ||
| Thermal Resistance Junction-to-Lead | RthJL | 24 | ℃/W | 2 | |||
| Junction Temperature | TJ | 150 | ℃ | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 2 | ||
| Drain-Source Breakdown Voltage | VDSS | 30 | V | ID=250 uA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=30V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | uA | VDS=30V, VGS=0V, TJ=55℃ | 3 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Gate Threshold Voltage | VGS(th) | 1.5 | 2.5 | V | VDS=VGS, ID=250uA | 3 | |
| Static Drain-Source On-Resistance | RDS(On) | 12 | mΩ | VGS=10V, ID=12A | 3 | ||
| Static Drain-Source On-Resistance | RDS(On) | 17 | mΩ | VGS=10V, ID=12A, TJ=125℃ | 3 | ||
| Static Drain-Source On-Resistance | RDS(On) | 15.5 | mΩ | VGS=4.5V, ID=10A | 3 | ||
| On State Drain Current | ID(ON) | 100 | A | VGS=10V, VDS=5V | 3 | ||
| Forward Transconductance | gFS | 45 | S | VDS=5V, ID=12A | 3 | ||
| Input Capacitance | Ciss | 610 | 910 | pF | VGS=0V, VDS=15V, f=1MHz | 3 | |
| Output Capacitance | Coss | 88 | 160 | pF | VGS=0V, VDS=15V, f=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 40 | 100 | pF | VGS=0V, VDS=15V, f=1MHz | 3 | |
| Gate Resistance | Rg | 0.8 | 2.4 | Ω | VGS=0V, VDS=0V, f=1MHz | 3 | |
| Total Gate Charge (10V) | Qg | 11 | 17 | nC | VGS=10V, VDS=15V, ID=12A | 3 | |
| Total Gate Charge (4.5V) | Qg | 5 | 8 | nC | VGS=10V, VDS=15V, ID=12A (shared block condition as printed) | 3 | |
| Gate Source Charge | Qgs | 1.9 | 2.9 | nC | VGS=10V, VDS=15V, ID=12A (shared block condition as printed) | 3 | |
| Gate Drain Charge | Qgd | 1.8 | 4.2 | nC | VGS=10V, VDS=15V, ID=12A (shared block condition as printed) | 3 | |
| Turn-On Delay Time | td(on) | 4.4 | ns | VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω | 3 | ||
| Turn-On Rise Time | tr | 9 | ns | VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω | 3 | ||
| Turn-Off Delay Time | td(off) | 17 | ns | VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω | 3 | ||
| Turn-Off Fall Time | tf | 6 | ns | VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω | 3 | ||
| Body Diode Reverse Recovery Time | trr | 5.6 | 8 | ns | IF=12A, dI/dt=500A/us | 3 | |
| Body Diode Reverse Recovery Charge | Qrr | 6.4 | 9.6 | nC | 3 | ||
| Maximum Body-Diode Continuous Current | IS | 4 | A | 3 | |||
| Diode Forward Voltage | VSD | 1 | V | IS=1A, VGS=0V | 3 |
CAD (KiCad official)
- Symbol:
AO4406-MS - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4406-ms-etched.step/ao4406-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4406-ms.step/ao4406-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (7 pp, sha256
0271045eb6b2ffa4, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).