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NTD6416ANT4G-HXY

Public Made by Adom

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HXY MOSFET MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

NTD6416ANT4G-HXY

HXY MOSFET · MOSFETs · TO-252

NTD6416ANT4G-HXY from HXY MOSFET, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drives the channel, with gate-source voltage rated at ±20 V and operation with gate voltages as low as 4.5 V.
2 D passive Drain, connected to the exposed tab and the (omitted) center lead position; drain-source voltage rated at 100 V and continuous drain current 20 A at TC=25℃.
3 S passive Source; carries the continuous source current rated at 20 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 20 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 10 A VGS @ 10V 1
Pulsed Drain Current IDM 30 A 1
Single Pulse Avalanche Energy EAS 6.1 mJ 1
Avalanche Current IAS 15 A 1
Total Power Dissipation PD@TC=25℃ 34.7 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 3.6 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 87 mΩ VGS=10V, ID=10A 2
Static Drain-Source On-Resistance RDS(ON) 105 mΩ VGS=4.5V, ID=8A 2
Gate Threshold Voltage VGS(th) 1 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=80V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=80V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 20 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 30 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
BVDSS Temperature Coefficient △BVDSS/△T 0.098 V/℃ Reference to 25℃, ID=1mA 2
VGS(th) Temperature Coefficient △VGS(th) -4.57 mV/℃ 2
Forward Transconductance gfs 13 S VDS=5V, ID=10A 2
Gate Resistance Rg 2 VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (10V) Qg 26.2 nC VDS=80V, VGS=10V, ID=10A 2
Gate-Source Charge Qgs 4.6 nC VDS=80V, VGS=10V, ID=10A 2
Gate-Drain Charge Qgd 5.1 nC VDS=80V, VGS=10V, ID=10A 2
Turn-On Delay Time Td(on) 4.2 ns VDD=50V, VGS=10V, RG=3.3, ID=10A 2
Rise Time Tr 8.2 ns VDD=50V, VGS=10V, RG=3.3, ID=10A 2
Turn-Off Delay Time Td(off) 35.6 ns VDD=50V, VGS=10V, RG=3.3, ID=10A 2
Fall Time Tf 9.6 ns VDD=50V, VGS=10V, RG=3.3, ID=10A 2
Input Capacitance Ciss 1535 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 60 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 37 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Recovery Time trr 37 nS IF=10A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 27.3 nC IF=10A, dI/dt=100A/µs, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: NTD6416ANT4G-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ntd6416ant4g-hxy-etched.step / ntd6416ant4g-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ntd6416ant4g-hxy.step / ntd6416ant4g-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 f686eb3f66a8bc58, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF