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SI3417DV-T1-GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownSI3417DV-T1-GE3
Vishay Intertech · MOSFETs · TSOP-6
SI3417DV-T1-GE3 from Vishay Intertech, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain of the P-channel MOSFET, electrically tied to pins 2, 5 and 6 and rated for VDS = -30 V; it also serves as the main thermal path from the die to the PCB. |
| 2 | D | passive | Drain of the P-channel MOSFET, electrically tied to pins 1, 5 and 6 and rated for VDS = -30 V; it also serves as the main thermal path from the die to the PCB. |
| 3 | G | input | Gate of the P-channel MOSFET; gate-source voltage is limited to ±20 V. |
| 4 | S | passive | Source of the P-channel MOSFET; the source-drain body diode is rated at a continuous current of -3.5 A at TC = 25 °C. |
| 5 | D | passive | Drain of the P-channel MOSFET, electrically tied to pins 1, 2 and 6 and rated for VDS = -30 V; it also serves as the main thermal path from the die to the PCB. |
| 6 | D | passive | Drain of the P-channel MOSFET, electrically tied to pins 1, 2 and 5 and rated for VDS = -30 V; it also serves as the main thermal path from the die to the PCB. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -8 | A | TJ = 150 °C; TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -7.3 | A | TJ = 150 °C; TA = 25 °C | 1 | ||
| Continuous Drain Current | ID | -5.8 | A | TJ = 150 °C; TA = 70 °C | 1 | ||
| Pulsed Drain Current | IDM | -50 | A | t = 100 µs | 1 | ||
| Continuous Source-Drain Diode Current | IS | -3.5 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | -1.7 | A | TA = 25 °C | 1 | ||
| Avalanche Current | IAS | -20 | A | L = 0.1 mH | 1 | ||
| Single-Pulse Avalanche Energy | EAS | 20 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 4.2 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.7 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.3 | W | TA = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 40 | 62.5 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Ambient | RthJA | 110 | °C/W | Steady state (note c) | 1 | ||
| Maximum Junction-to-Foot Steady State | RthJF | 25 | 30 | °C/W | Steady state | 1 | |
| Drain-Source Breakdown Voltage | VDS | -30 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -1 | -3 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | VDS = -30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -30 | A | VDS -10 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.021 | 0.0252 | Ω | VGS = -10 V, ID = -7.3 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.03 | 0.036 | Ω | VGS = -4.5 V, ID = -6.1 A | 2 | |
| Total Gate Charge | Qg | 32 | 50 | nC | VDS = -15 V, VGS = -10 V, ID = -7.3 A | 2 | |
| Total Gate Charge | Qg | 15 | 25 | nC | VDS = -15 V, VGS = -4.5 V, ID = -7.3 A | 2 | |
| Gate Resistance | Rg | 1.2 | 5.8 | 11.6 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 10 | 15 | ns | VDD = -15 V, RL = 2.6 Ω, ID -5.8 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 8 | 15 | ns | VDD = -15 V, RL = 2.6 Ω, ID -5.8 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 45 | 70 | ns | VDD = -15 V, RL = 2.6 Ω, ID -5.8 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 12 | 25 | ns | VDD = -15 V, RL = 2.6 Ω, ID -5.8 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 42 | 70 | ns | VDD = -15 V, RL = 2.6 Ω, ID -5.8 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 35 | 60 | ns | VDD = -15 V, RL = 2.6 Ω, ID -5.8 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 40 | 70 | ns | VDD = -15 V, RL = 2.6 Ω, ID -5.8 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 16 | 30 | ns | VDD = -15 V, RL = 2.6 Ω, ID -5.8 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Pulse Diode Forward Current | ISM | -50 | A | t = 100 µs | 2 | ||
| Body Diode Voltage | VSD | -0.75 | -1.2 | V | IS = -5.8 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 34 | 60 | ns | IF = -5.8 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 22 | 40 | nC | IF = -5.8 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | pins 1,2,5, and 6. The copper plane connects the drain pins | 8 |
CAD (KiCad official)
- Symbol:
SI3417DV-T1-GE3 - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
si3417dv-t1-ge3-etched.step/si3417dv-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si3417dv-t1-ge3.step/si3417dv-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (11 pp, sha256
eb318c6f483bfba7, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).