component
RU1L002SNMGTL
Public Made by Adomby adom
ROHM Semicon MOSFETs, SOT-323-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRU1L002SNMGTL
ROHM Semicon · MOSFETs · SOT-323-3
RU1L002SNMGTL from ROHM Semicon, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal with an internal ESD protection diode; VGSS is rated ±20 V and VGS(th) is 1.0 to 2.3 V at VDS = 10 V, ID = 1 mA. |
| 2 | Source | passive | Source terminal, connected to the body diode anode; continuous body-diode forward current IS is 125 mA max. |
| 3 | Drain | passive | Drain terminal with VDSS of 60 V and continuous drain current ID of ±250 mA (pulsed ±1 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-323-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | 60 | V | 1 | |||
| Continuous drain current | ID | -250 | 250 | mA | 1 | ||
| Pulsed drain current | IDP | -1 | 1 | A | *1 Pw≦10μs, Duty cycle≦1% | 1 | |
| Gate - Source voltage | VGSS | -20 | 20 | V | 1 | ||
| Power dissipation | PD | 200 | mW | *2 Each terminal mounted on a reference land. | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction - ambient | RthJA | 625 | ℃/W | *2 Each terminal mounted on a reference land. | 2 | ||
| Drain - Source breakdown voltage | V(BR)DSS | 60 | V | VGS = 0V, ID = 1mA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 60V, VGS = 0V | 2 | ||
| Gate - Source leakage current | IGSS | -10 | 10 | μA | VGS = ±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 1 | 2.3 | V | VDS = 10V, ID = 1mA | 2 | |
| Static drain - source on - state resistance | RDS(on) | 1.7 | 2.4 | Ω | VGS = 10V, ID = 250mA | 2 | |
| Static drain - source on - state resistance | RDS(on) | 2.1 | 3 | Ω | VGS = 4.5V, ID = 250mA | 2 | |
| Static drain - source on - state resistance | RDS(on) | 2.3 | 3.2 | Ω | VGS = 4.0V, ID = 250mA | 2 | |
| Static drain - source on - state resistance | RDS(on) | 3 | 12 | Ω | VGS = 2.5V, ID = 10mA | 2 | |
| Forward transfer admittance | /Yfs/ | 250 | mS | VDS = 10V, ID = 250mA | 2 | ||
| Continuous forward current | IS | 125 | mA | Ta = 25℃ | 3 | ||
| Pulse forward current | ISP | 1 | A | *1 Pw≦10μs, Duty cycle≦1% | 3 | ||
| Forward voltage | VSD | 1.2 | V | VGS = 0V, IS = 250mA | 3 |
CAD (KiCad official)
- Symbol:
RU1L002SNMGTL - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323-3 (KiCad packages3D, STEP)
- 3D model files:
ru1l002snmgtl-etched.step/ru1l002snmgtl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ru1l002snmgtl.step/ru1l002snmgtl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (12 pp, sha256
a081559e7b4d4376, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).