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MMBT489LT1G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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MMBT489LT1G

onsemi · Bipolar (BJT) · SOT-23

MMBT489LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor; VBE(sat) is 1.1 V max at IC = 1.0 A, IB = 0.1 A, and VBE(on) is 1.1 V max at IC = 1.0 mA, VCE = 2.0 V.
2 EMITTER passive Emitter terminal of the NPN transistor; the absolute emitter-base voltage rating is VEBO = 5.0 Vdc.
3 COLLECTOR passive Collector terminal of the NPN transistor; rated VCEO 30 Vdc, continuous IC 1.0 A, and peak ICM 2.0 A.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 30 Vdc IC = 10 mAdc, IB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO 50 Vdc IC = 0.1 mAdc, IE = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 5 Vdc IE = 0.1 mAdc, IC = 0 2
Collector Cutoff Current ICBO 0.1 Adc VCB = 30 Vdc, IE = 0 2
Collector-Emitter Cutoff Current ICES 0.1 Adc VCES = 30 Vdc 2
Emitter Cutoff Current IEBO 0.1 Adc VEB = 4.0 Vdc 2
DC Current Gain hFE 300 IC = 50 mA, VCE = 5.0 V 2
DC Current Gain hFE 300 900 IC = 0.5 A, VCE = 5.0 V 2
DC Current Gain hFE 200 IC = 1.0 A, VCE = 5.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) 0.2 V IC = 1.0 A, IB = 100 mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.125 V IC = 0.5 A, IB = 50 mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.075 V IC = 0.1 A, IB = 1.0 mA 2
Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC = 1.0 A, IB = 0.1 A 2
Base-Emitter Turn-on Voltage VBE(on) 1.1 V IC = 1.0 mA, VCE = 2.0 V 2
Cutoff Frequency fT 100 MHz IC = 100 mA, VCE = 5.0 V, f = 100 MHz 2
Output Capacitance Cobo 15 pF f = 1.0 MHz 2
Collector-Emitter Voltage VCEO 30 Vdc 1
Collector-Base Voltage VCBO 50 Vdc 1
Emitter-Base Voltage VEBO 5 Vdc 1
Collector Current - Continuous IC 1 A 1
Collector Current - Peak ICM 2 A 1
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Total Device Dissipation PD 310 mW TA = 25°C, FR-4 @ Minimum Pad (Note 1) 1
Derate above 25°C PD 2.5 mW/°C FR-4 @ Minimum Pad (Note 1) 1
Thermal Resistance, Junction-to-Ambient RJA 403 °C/W FR-4 @ Minimum Pad (Note 1) 1
Total Device Dissipation PD 710 mW TA = 25°C, FR-4 @ 1.0 X 1.0 inch Pad (Note 2) 1
Derate above 25°C PD 5.7 mW/°C FR-4 @ 1.0 X 1.0 inch Pad (Note 2) 1
Thermal Resistance, Junction-to-Ambient RJA 176 °C/W FR-4 @ 1.0 X 1.0 inch Pad (Note 2) 1
Total Device Dissipation (Single Pulse < 10 s) PDsingle 575 mW Single pulse < 10 s 1

CAD (KiCad official)

  • Symbol: MMBT489LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt489lt1g-etched.step / mmbt489lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt489lt1g.step / mmbt489lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 a56db5b9ecb73f80, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF