component
2SA1182-GR
Public Made by Adomby adom
TOSHIBA Bipolar (BJT), TO-236-3(SOT-23-3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SA1182-GR
TOSHIBA · Bipolar (BJT) · TO-236-3(SOT-23-3)
2SA1182-GR from TOSHIBA, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base of the PNP transistor; base current IB is rated at -50 mA max and VEBO at -5 V. |
| 2 | EMITTER | passive | Emitter of the PNP transistor; emitter-base voltage VEBO is rated at -5 V. |
| 3 | COLLECTOR | passive | Collector of the PNP transistor; VCBO is -35 V, VCEO is -30 V and collector current IC is -500 mA max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-236-3(SOT-23-3) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector cut-off current | ICBO | 0.1 | A | VCB = 35 V, IE = 0 A | 2 | ||
| Emitter cut-off current | IEBO | 0.1 | A | VEB = 5 V, IC = 0 A | 2 | ||
| DC current gain, rank GR | hFE (1) | 200 | 400 | VCE = 1 V, IC = 100 mA | 2 | ||
| DC current gain, rank GR | hFE (2) | 70 | VCE = 6 V, IC = 400 mA | 2 | |||
| Collector-emitter saturation voltage | VCE (sat) | 0.1 | 0.25 | V | IC = 100 mA, IB = 10 mA | 2 | |
| Base-emitter voltage | VBE | 0.8 | 1 | V | VCE = 1 V, IC = 100 mA | 2 | |
| Transition frequency | fT | 200 | MHz | VCE = 6 V, IC = 20 mA | 2 | ||
| Collector-base voltage | VCBO | 35 | V | Ta = 25°C | 1 | ||
| Collector-emitter voltage | VCEO | 30 | V | Ta = 25°C | 1 | ||
| Emitter-base voltage | VEBO | 5 | V | Ta = 25°C | 1 | ||
| Collector current | IC | 500 | mA | Ta = 25°C | 1 | ||
| Base current | IB | 50 | mA | Ta = 25°C | 1 | ||
| Collector power dissipation | PC | 150 | mW | Note 3 (ordering part number not ending in LF(T), Ta = 25°C) | 1 | ||
| Junction temperature | Tj | 125 | °C | Note 3 (ordering part number not ending in LF(T)) | 1 | ||
| Storage temperature range | Tstg | -55 | 125 | °C | Note 3 (ordering part number not ending in LF(T)) | 1 |
CAD (KiCad official)
- Symbol:
2SA1182-GR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
- 3D model files:
2sa1182-gr-etched.step/2sa1182-gr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sa1182-gr.step/2sa1182-gr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (4 pp, sha256
c6dbba782229e817, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).