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ZJA3601BSABT

Public Made by Adom

by adom

ZJW Instrumentation OpAmps, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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ZJA3601BSABT

ZJW · Instrumentation OpAmps · SOIC-8

ZJA3601BSABT from ZJW, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 -IN input Inverting analog input, clamped to the supply rails with input current limited to ±10 mA.
2 RG passive Gain setting pin; place the gain resistor between pin 2 and pin 3 (G = 1 + 49.4 kΩ/RG).
3 RG passive Gain setting pin; place the gain resistor between pin 2 and pin 3 (G = 1 + 49.4 kΩ/RG).
4 +IN input Non-inverting analog input, clamped to the supply rails with input current limited to ±10 mA.
5 -VS power_in Negative power supply, with supply voltage specified from ±2.4 V to ±18 V (absolute maximum ±20 V).
6 REF input Reference input that must be driven by a low impedance source.
7 OUT output Rail-to-rail output with short-circuit duration to GND continuous, limited by over temperature protection.
8 +VS power_in Positive power supply, with supply voltage specified from ±2.4 V to ±18 V (absolute maximum ±20 V).

Key specifications

Parameter Value
Manufacturer ZJW
Package SOIC-8
Category Operational Amplifier/Comparator
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Range of Gain G 1 10000 V/V 6
Gain Error G=1 B Grade GE 0.0001 0.001 % VOUT = ±10 V, G = 1, B Grade 6
Gain Error G=1 B Grade over temp GE 0.003 % VOUT = ±10 V, G = 1, B Grade, over specified temperature range 6
Gain Error G=10 B Grade GE 0.01 0.1 % VOUT = ±10 V, G = 10, B Grade 6
Gain Error G=10 B Grade over temp GE 0.25 % VOUT = ±10 V, G = 10, B Grade, over specified temperature range 6
Gain Error G=100 B Grade GE 0.01 0.1 % VOUT = ±10 V, G = 100, B Grade 6
Gain Error G=1000 B Grade GE 0.01 0.1 % VOUT = ±10 V, G = 1,000, B Grade 6
Gain Nonlinearity G=1 to 10 0.5 5 ppm VOUT = -10 V to +10 V, G = 1 to 10, RL = 10 kΩ 6
Gain Nonlinearity G=100 10 ppm VOUT = -10 V to +10 V, G = 100, RL = 10 kΩ 6
Gain Nonlinearity G=1000 20 ppm VOUT = -10 V to +10 V, G = 1000, RL = 10 kΩ 6
Gain Nonlinearity G=1 to 100, RL=2 kΩ 20 ppm VOUT = -10 V to +10 V, G = 1 to 100, RL = 2 kΩ 6
Gain vs Temperature G=1 B Grade 0.1 0.5 ppm/°C G = 1, B Grade, over specified temperature range 6
Gain vs Temperature G>11 -50 10 50 ppm/°C G > 11, over specified temperature range 6
Input Offset Voltage B Grade VOSI 5 25 µV B Grade 6
Input Offset Voltage B Grade over temp VOSI 85 µV B Grade, over specified temperature range 6
Input Offset Voltage Average TC TCVOSI 0.6 µV/°C over specified temperature range 6
Output Offset Voltage B Grade VOSO 30 150 µV B Grade 7
Output Offset Voltage B Grade over temp VOSO 200 µV B Grade, over specified temperature range 7
Output Offset Voltage Average TC B Grade TCVOSO 2 µV/°C B Grade, over specified temperature range 7
PSRR G=1 B Grade PSRR 110 130 dB Vs = ±2.4 V to ±18 V, G = 1, B Grade 7
PSRR G=10 B Grade PSRR 130 140 dB Vs = ±2.4 V to ±18 V, G = 10, B Grade 7
PSRR G=100 B Grade PSRR 130 140 dB Vs = ±2.4 V to ±18 V, G = 100, B Grade 7
PSRR G=1000 B Grade PSRR 140 150 dB Vs = ±2.4 V to ±18 V, G = 1,000, B Grade 7
Input Bias Current IB 5 25 pA 7
Input Offset Current IOS 2 20 pA 7
CMRR G=1 B Grade CMRR 105 120 dB DC to 60 Hz, VCM = -10 V to +10 V, G = 1, B Grade 7
CMRR G=1 B Grade over temp CMRR 94 dB DC to 60 Hz, VCM = -10 V to +10 V, G = 1, B Grade, over specified temperature range 7
CMRR G=10 B Grade CMRR 120 140 dB DC to 60 Hz, VCM = -10 V to +10 V, G = 10, B Grade 7
CMRR G=100 B Grade CMRR 140 150 dB DC to 60 Hz, VCM = -10 V to +10 V, G = 100, B Grade 7
CMRR G=1000 B Grade CMRR 140 150 dB DC to 60 Hz, VCM = -10 V to +10 V, G = 1,000, B Grade 7
Slew Rate SR 0.75 2 V/µs 8
Reference Input Current IIN 0.003 0.03 µA VIN+, VIN-, VREF = 0 8
Operating Supply Range 2.4 18 V printed as ±2.4 V to ±18 V (dual supply, magnitude) 8
Quiescent Current ISY 3.3 3.8 mA 8
Quiescent Current over temp ISY 3.8 mA over specified temperature range 8
Specified Temperature Range -40 125 °C 8
Supply Voltage 20 V printed ±20 V 5
Input Current -10 10 mA printed ±10 mA 5
Operating Temperature Range -40 125 °C 5
Storage Temperature Range -65 150 °C 5
Lead Temperature, Soldering (10 sec) 260 °C 10 sec 5
ESD Human Body Model HBM 3 kV ANSI/ESDA/JEDEC JS-001 5
ESD Charged Device Model CDM 2 kV ANSI/ESDA/JEDEC JS-002 5
Thermal Resistance Junction-to-Ambient SOIC-8 θJA 158 °C/W SOIC-8 5
Thermal Resistance Junction-to-Case SOIC-8 θJC 43 °C/W SOIC-8 5
Short-Circuit Current source ISC 90 mA source 8
Short-Circuit Current sink ISC 50 mA sink 8
Small Signal Bandwidth -3 dB G=1 3200 kHz G = 1 8
Small Signal Bandwidth -3 dB G=10 625 kHz G = 10 8
Settling Time (to 0.01 %) G=1 to 10 tS 6.5 µs G = 1 to 10, 0 to 10 V step 8
Input Voltage Noise eni 8 nV/√Hz f = 1 kHz 8
Output Voltage Noise eno 75 nV/√Hz f = 1 kHz 8
RTI Noise G=1 2 µVP-P f = 0.1 Hz to 10 Hz, G = 1 8
Reference Input Resistance RIN 10 kΩ VIN+, VIN-, VREF = 0 8

CAD (KiCad official)

  • Symbol: ZJA3601BSABT
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: zja3601bsabt-etched.step / zja3601bsabt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zja3601bsabt.step / zja3601bsabt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ZJW datasheet (28 pp, sha256 67c869b7b1dbd963, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF