component
NTZD3155CT2G
Public Made by Adomby adom
onsemi MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownNTZD3155CT2G
onsemi · MOSFETs · SOT-563
NTZD3155CT2G from onsemi, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET; the N-channel device is rated 20 V VDSS and 540 mA continuous drain current at TA = 25°C (steady state). |
| 2 | G1 | input | Gate of the N-channel MOSFET, with ESD protection; gate-to-source voltage is rated ±6 V maximum. |
| 3 | D2 | passive | Drain of the P-channel MOSFET; the P-channel device is rated −20 V VDSS and −430 mA continuous drain current at TA = 25°C (steady state). |
| 4 | S2 | passive | Source of the P-channel MOSFET, referenced to the P-channel device rating of −20 V VDSS. |
| 5 | G2 | input | Gate of the P-channel MOSFET, with ESD protection; gate-to-source voltage is rated ±6 V maximum. |
| 6 | D1 | passive | Drain of the N-channel MOSFET; the N-channel device is rated 20 V VDSS. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-563 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-to-Source Voltage | VGS | -6 | 6 | V | 1 | ||
| Drain-to-Source Breakdown Voltage (N-channel) | V(BR)DSS | 20 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Drain-to-Source Breakdown Voltage (P-channel) | V(BR)DSS | -20 | V | ID = −250 µA | 2 | ||
| Zero Gate Voltage Drain Current (N-channel, TJ = 25°C) | IDSS | 1 | µA | VGS = 0 V, VDS = 16 V, TJ = 25°C | 2 | ||
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -1 | µA | VGS = 0 V, VDS = −16 V | 2 | ||
| Zero Gate Voltage Drain Current (N-channel, TJ = 125°C) | IDSS | 2 | µA | VGS = 0 V, VDS = 16 V, TJ = 125°C | 2 | ||
| Zero Gate Voltage Drain Current (P-channel, TJ = 125°C) | IDSS | -5 | µA | VGS = 0 V, VDS = −16 V | 2 | ||
| Gate-to-Source Leakage Current (P-channel) | IGSS | 2 | µA | VDS = 0 V, VGS = ±4.5 V | 2 | ||
| Gate-to-Source Leakage Current (N-channel) | IGSS | 5 | µA | 2 | |||
| Gate Threshold Voltage (N-channel) | VGS(TH) | 0.45 | 1 | V | VGS = VDS, ID = 250 µA | 2 | |
| Gate Threshold Voltage (P-channel) | VGS(TH) | -0.45 | -1 | V | ID = −250 µA | 2 | |
| Drain-to-Source On Resistance (N-channel) | RDS(on) | 0.4 | 0.55 | Ω | VGS = 4.5 V, ID = 540 mA | 2 | |
| Drain-to-Source On Resistance (P-channel) | RDS(on) | 0.5 | 0.9 | Ω | VGS = −4.5 V, ID = −430 mA | 2 | |
| Drain-to-Source On Resistance (N-channel) | RDS(on) | 0.5 | 0.7 | Ω | VGS = 2.5 V, ID = 500 mA | 2 | |
| Drain-to-Source On Resistance (P-channel) | RDS(on) | 0.6 | 1.2 | Ω | VGS = −2.5 V, ID = −300 mA | 2 | |
| Drain-to-Source On Resistance (N-channel) | RDS(on) | 0.7 | 0.9 | Ω | VGS = 1.8 V, ID = 350 mA | 2 | |
| Drain-to-Source On Resistance (P-channel) | RDS(on) | 1 | 2 | Ω | VGS = −1.8 V, ID = −150 mA | 2 | |
| Input Capacitance (N-channel) | CISS | 80 | 150 | pF | f = 1 MHz, VGS = 0 V, VDS = 16 V | 2 | |
| Output Capacitance (N-channel) | COSS | 13 | 25 | pF | f = 1 MHz, VGS = 0 V, VDS = 16 V | 2 | |
| Reverse Transfer Capacitance (N-channel) | CRSS | 10 | 20 | pF | f = 1 MHz, VGS = 0 V, VDS = 16 V | 2 | |
| Input Capacitance (P-channel) | CISS | 105 | 175 | pF | f = 1 MHz, VGS = 0 V, VDS = −16 V | 2 | |
| Output Capacitance (P-channel) | COSS | 15 | 30 | pF | f = 1 MHz, VGS = 0 V, VDS = −16 V | 2 | |
| Reverse Transfer Capacitance (P-channel) | CRSS | 10 | 20 | pF | f = 1 MHz, VGS = 0 V, VDS = −16 V | 2 | |
| Total Gate Charge (N-channel) | QG(TOT) | 1.5 | 2.5 | nC | VGS = 4.5 V, VDS = −10 V; ID = 540 mA | 3 | |
| Total Gate Charge (P-channel) | QG(TOT) | 1.7 | 2.5 | nC | VGS = −4.5 V, VDS = 10 V; ID = −380 mA | 3 | |
| Forward Diode Voltage (N-channel) | VSD | 0.7 | 1.2 | V | VGS = 0 V, TJ = 25°C, IS = 350 mA | 3 | |
| Forward Diode Voltage (P-channel) | VSD | -0.8 | -1.2 | V | VGS = 0 V, TJ = 25°C, IS = −350 mA | 3 | |
| Continuous Drain Current N-channel, steady state | ID | 540 | mA | Steady state, TA = 25°C | 1 | ||
| Continuous Drain Current N-channel, steady state | ID | 390 | mA | Steady state, TA = 85°C | 1 | ||
| Continuous Drain Current N-channel, t ≤ 5 s | ID | 570 | mA | t 5 s, TA = 25°C | 1 | ||
| Continuous Drain Current P-channel, steady state | ID | -430 | mA | Steady state, TA = 25°C | 1 | ||
| Continuous Drain Current P-channel, steady state | ID | -310 | mA | Steady state, TA = 85°C | 1 | ||
| Continuous Drain Current P-channel, t ≤ 5 s | ID | -455 | mA | t 5 s, TA = 25°C | 1 | ||
| Power Dissipation, steady state | PD | 250 | mW | Steady state, TA = 25°C | 1 | ||
| Power Dissipation, t ≤ 5 s | PD | 280 | mW | t 5 s, TA = 25°C | 1 | ||
| Pulsed Drain Current N-channel | IDM | 1500 | mA | tp = 10 s | 1 | ||
| Pulsed Drain Current P-channel | IDM | -750 | mA | 1 | |||
| Operating Junction and Storage Temperature | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Source Current (Body Diode) | IS | 350 | mA | 1 | |||
| Lead Temperature for Soldering Purposes | TL | 260 | °C | 1/8 in from case for 10 s | 1 | ||
| Junction-to-Ambient Thermal Resistance, steady state | RθJA | 500 | °C/W | Steady state, surface mounted on FR4, 1 in² pad | 2 | ||
| Junction-to-Ambient Thermal Resistance, t = 5 s | RθJA | 447 | °C/W | t = 5 s, surface mounted on FR4, 1 in² pad | 2 |
CAD (KiCad official)
- Symbol:
NTZD3155CT2G - Footprint:
Package_TO_SOT_SMD:SOT-563 - 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files:
ntzd3155ct2g-etched.step/ntzd3155ct2g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntzd3155ct2g.step/ntzd3155ct2g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (10 pp, sha256
969cadd0e9f67fb3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).